基于<em>k</em>·<em>p</em>方法的二类超晶格红外探测器仿真进展

孙童; 关晓宁; 张凡; 宋海智; 芦鹏飞

doi:10.7510/jgjs.issn.1001-3806.2023.04.001

基于k·p方法的二类超晶格红外探测器仿真进展

孙童¹,
关晓宁¹,
张凡²,
宋海智^3,4,
芦鹏飞^1,2, ,

1.
北京邮电大学信息光子学与光通信全国重点实验室，北京 100876
2.
超晶科技(北京)有限公司, 北京 100083
3.
西南技术物理研究所，成都 610041
4.
电子科技大学基础与前沿研究院，成都 610054

基金项目:

中国兵器工业集团激光器件技术重点实验室开放课题基金资助项目 KLLDT202103

详细信息

作者简介:
孙童(1998-)，女，博士研究生，现主要从事器件模拟的研究

通讯作者:
芦鹏飞, E-mail: photon.bupt@gmail.com

中图分类号: TN215
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- 文章访问数: 21
- HTML全文浏览量: 6
- PDF下载量: 26
出版历程
- 收稿日期: 2022-06-26
- 修回日期: 2022-09-15
- 发布日期: 2023-07-24

Progress in simulation of type-Ⅱ superlattice infrared detectors based on the k·p method

1.
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
SuperMat Technology(Beijing)Co. Ltd., Beijing 100083, China
3.
Southwest Institute of Technical Physics, Chengdu 610041, China
4.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

摘要

摘要: 二类超晶格(T2SL)相对于其它制冷型红外探测器材料体系，具有成本低、均匀性高、工艺兼容性好等特点，且波长灵活可调、俄歇复合速率低。 k · p 方法作为一种常用且相对成熟的能带结构仿真技术，具有计算精度高、节省计算资源等特点，在T2SL的仿真中受到了广泛的关注。梳理了中波、长波、甚长波T2SL红外探测器的仿真进展，归纳了 k · p 方法的发展过程，以及该方法在T2SL红外探测器仿真中的进展和作用，直观展示 k · p 方法在超晶格仿真工作中的准确性与便利性；重点讨论了T2SL探测器的暗电流机制、量子效率和吸收光谱等性质，对T2SL红外探测器的研究和应用前景进行展望。采用包络函数近似下的 k · p 方法可以对超晶格材料的能带结构和电子性质进行较为准确的理论分析和仿真计算。
- 探测器 /
- 二类超晶格 /
- k·p方法 /
- 器件仿真
Abstract: Compared with other cooled infrared detector material systems, type-Ⅱ superlattice (T2SL) has the characteristics of low cost, high uniformity, good process compatibility, flexible wavelength adjustability and lower Auger recombination rates. As a commonly used and relatively mature energy band structure simulation technology, the k · p method has the characteristics of high computational accuracy and saving computing resources, and has received widespread attention in the simulation of T2SL. The progress of simulation of mid-wave, long-wave, and very-long-wave T2SL infrared detectors was reviewed, and the development process of the k · p method was summarized, as well as the progress and role of the method in the simulation of T2SL infrared detectors, to more intuitively demonstrate the accuracy and convenience of the k · p method in superlattice simulation work. The dark current mechanisms, quantum efficiency, absorption spectra, and other properties of T2SL detectors were discussed with emphasis on the prospect of research and application of T2SL infrared detectors. The k · p method under the approximation of the envelope function can be used to perform accurate theoretical analysis and simulation calculations on the band structure and electronic properties of superlattice materials.
- detectors /
- type-Ⅱ superlattices /
- the k·p method /
- device simulation

HTML全文

感谢鲁东大学的马晓光教授、王子昊、杨露露、郭子仪、徐佩瑶、王晨璐、谢新宇及北京邮电大学的刘刚副教授、贾宝楠、孙懿凡、沈东培对本项工作的支持。

图 1 InAs/GaSb T2SL能带结构^[10]

Figure 1. InAs/GaSb T2SL band structure^[10]

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图 2 超晶格电子结构计算方法

Figure 2. Calculation method of superlattice electronic structure

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图 3 实验和仿真结果^[4]

Figure 3. Experimental and simulationresults^[4]

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图 4 a—能量色散关系^[19]  b—14.7 ML InAs/7 ML GaSb T2SL吸收光谱^[19]

Figure 4. a—energy dispersion relationship^[19]  b—14.7 ML InAs/7 ML GaSb T2SL absorption spectrum^[19]

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图 5 a—中波器件生长顺序示意图^[37]  b—不同温度下暗电流的Arrhenius图^[37]

Figure 5. a—medium wave device growth sequence diagram^[37]  b—dark current Arrhenius diagram at different temperatures^[37]

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图 6 实验和理论值比较^[38]

Figure 6. Experimental and theoretical comparison^[38]

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图 7 a—超晶格材料的能带图^[39]  b—电流密度与电压关系^[39]

Figure 7. a—superlattice material and band diagram^[39]  b—current density vs. voltage relationship^[39]

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图 8 实验测量和理论模拟^[40]

Figure 8. Experimental measurements and theoretical simulations^[40]

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图 9 a，b—7 ML InAs/4 ML GaSb T2SL不同界面结构下的能带结构示意图^[41]  c，d—微带色散示意图^[41]

Figure 9. a, b—schematic diagram of band structure under different interface structures of 7 ML InAs/4 ML GaSb T2SL^[41]  c, d—diagram of miniband dispersion^[41]

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图 10 暗电流密度模拟^[41]

Figure 10. Dark current density simulation^[41]

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图 11 a—150 K时提取的一个周期的InAs/InAsSb SL能带示意图^[42]  b—150 K时InAs/InAsSb SL在k_x和k_z方向上的微带色散^[42]

Figure 11. a—schematic diagram of energy band in one period ofInAs/InAsSb SL extracted at 150 K^[42]  b—diagram of miniband dispersion of InAs/InAsSb SL in the k_x and k_z directions at 150 K^[42]

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图 12 不同吸收层厚度下的曲线^[44]

Figure 12. Curve under different absorption thickness^[44]

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图 13 M结构超晶格^[44]

a—能带排列示意图  b—带隙测量与理论预测比较

Figure 13. M-structure superlattice^[44]

a—schematic diagram of the energy band arrangement  b—comparison of the band gap measurement and theoretical prediction

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图 14 PNN探测器^[45]

a—结构图  b—不同温度下暗电流与电压的关系

Figure 14. PNN detector^[45]

a—structure diagram  b—relationship between dark current and voltage at different temperatures

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图 15 a—PπMN超晶格结构^[46]  b—具有M结构势垒的二极管电学特性^[46]

Figure 15. a—PπMN superlattice structure^[46]  b—electrical characteristics of diode with M-structure barrier^[46]

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图 16 a—接近工作偏置时PB_pP器件的层排列、带剖面^[48]  b—InAs/GaSb器件的暗电流随温度的变化关系^[48]

Figure 16. a—layer arrangement and band profile of PB_pP devices near their working bias^[48]  b—dark current of InAs/GaSb devices changing with temperature^[48]

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图 17 PBπN红外探测器^[49]

a—外延结构图及其能带示意图  b—暗电流密度

Figure 17. PBπN infrared detector^[49]

a—epitaxial structure and band diagram  b—dark current density

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图 18 PBP器件^[49]

a—层排列、带剖面  b—PBP器件与N-P二极管的暗电流

Figure 18. PBP device^[49]

a—layer arrangement, band profile  b—dark current of PBP device and N-P diode

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图 19 InAs/GaAsSb T2SL长波器件^[55]

a—结构图  b—不同温度下暗电流随偏压的变化

Figure 19. InAs/GaAsSb T2SL long wave device^[51]

a—structure diagram  b—dark current variation with bias at different temperatures

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图 20 InAs/InAsSb超晶格^[52]

a—带隙图  b—I-V特性的经验数据(点)和理论计算

Figure 20. InAs/InAsSb superlattice^[52]

a—bandgap diagram  b—empirical data (dots) and theoretical calculations of I-V properties

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图 21 InAs/InAsSb二类超晶格^[53]

a—势垒探测器结构  b—T=210 K时的电子能带结构

Figure 21. InAs/InAsSb T2SL^[53]

a—barrier detector structure  b—electronic band structure of InAs/InAsSb T2SL at T=210 K

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图 22 a—器件横截面示意图^[9]  b—两种不同InAs/GaSb超晶格设计的吸收光谱^[9]

Figure 22. a—device cross section schematic diagram^[9]  b—absorption spectra of two different InAs/GaSb superlattice designs^[9]

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图 23 InAs/GaSb甚长波二类超晶格^[54]

a—结构图  b—测得和模拟的吸收系数

Figure 23. InAs/GaSb VLWIR T2SL^[54]

a—structure diagram  b—measured and simulated absorption coefficients

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基于k·p方法的二类超晶格红外探测器仿真进展

作者简介:
孙童(1998-)，女，博士研究生，现主要从事器件模拟的研究

通讯作者:
芦鹏飞, E-mail: photon.bupt@gmail.com

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Progress in simulation of type-Ⅱ superlattice infrared detectors based on the k·p method

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基于k·p方法的二类超晶格红外探测器仿真进展

作者简介: 孙童(1998-)，女，博士研究生，现主要从事器件模拟的研究

通讯作者: 芦鹏飞, E-mail: photon.bupt@gmail.com

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出版历程

Progress in simulation of type-Ⅱ superlattice infrared detectors based on the k·p method

计量

出版历程

目录

友情链接：

作者简介:
孙童(1998-)，女，博士研究生，现主要从事器件模拟的研究

通讯作者:
芦鹏飞, E-mail: photon.bupt@gmail.com