Research progress on the high quantum efficiency mechanism of T2SL infrared detectors
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摘要: 二类超晶格(T2SL)红外探测器灵敏度高、响应速度快，适用于更远距离成像、更高速度的运动目标追踪。量子效率(QE)是决定光电探测器能否高质量成像的关键指标之一，提高T2SL红外探测器的QE具有重要意义。为了更直观地理解T2SL红外探测器QE的提高方式，梳理了中长波T2SL红外探测器提高QE的方法，归纳了QE在不同调控手段下能达到的程度，重点讨论了能带结构设计、吸收层厚度设定、吸收层掺杂类型选择、材料改进等方面对T2SL红外探测器QE的影响情况，并对T2SL红外探测器高QE的研究现状和未来发展进行了展望。Abstract: Type-Ⅱsuperlattice (T2SL) infrared detector has high sensitivity and fast response speed, which is suitable for longer distance imaging and higher speed tracking of moving targets. Quantum efficiency (QE) is one of the key indicators to determine whether the photodetector can achieve high quality imaging, so it is of great significance to improve the QE of T2SL infrared detector. In order to have a more intuitive understanding of how T2SL infrared detector QE can be improved, the methods to improve QE of mid-long wave T2SL infrared detector were reviewed, and the extent to which QE can be achieved under different regulatory means were summarized. The effects of band structure design, absorption layer thickness setting, absorption layer doping type selection and material improvement on QE of T2SL infrared detectors are discussed, and the research status and future development of high QE of T2SL infrared detectors are also prospected.
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Keywords:
- detector /
- type-Ⅱ superlattice /
- quantum efficiency /
- absorption layer
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图 3 a—AOI界面As-Sb交换示意图[26] b—InAs/AlSb的理想能带结构电子和空穴在各层的对称分布[26] c—改进的带模型和载流子不对称分布示意图[26]
Figure 3. a—schematic diagram of As-Sb exchange at AOI interface[26] b—symmetrical distribution of electrons and holes in each layer of the ideal band structure of InAs/AlSb[26] c—schematic diagram of improved band model and carrier asymmetry distribution[26]
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表 1 3种材料优缺点对比
Table 1 Comparison of advantages and disadvantages of three materials
材料 优点 缺点 MCT (1)迁移率高，光生少数载流子寿命长；
(2)QE高，暗电流低；
(3)覆盖2 μm~24 μm波段，波长可调。(1)Hg原子不稳定；
(2)当前工作温度低；
(3)产线专用、工艺复杂；
(4)衬底成本高，良率低，器件稳定性差；
(5)大面阵难度高，发展多色探测器困难。InSb (1)电子有效质量小、迁移率高，光生少数载流子寿命长，QE高；
(2)材料均匀性、稳定性高，成品率高；
(3)工艺兼容性强，成本低，易批产。(1)覆盖1.0 μm~5.5 μm波段，波长不可调；
(2)工作温度低，要求制冷成本高；
(3)暗电流大；
(4)不能发展长波、双色及多色探测器。T2SL (1)电子空穴空间分离，电子有效质量大，材料缺陷密度小，暗电流低，均匀性好；
(2)带隙可调，覆盖2 μm~30 μm波段；
(3)工艺兼容性强，成本低，成品率高，易批产；
(4)可高温工作；
(5)可制作大面阵，可发展双色、多色红外探测器。产业化时间有限，工程化经验需要积累。 
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表 2 InAs/InAsSb超晶格红外探测器的性能参数
Table 2 Performance parameters of InAs/InAs Sbsuperlattice infrared detector
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