Influence of laser energy on average size of Si nanoparticles deposited in thin film
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摘要: 为了制备纳米硅薄膜,采用脉冲激光沉积系统,保持靶材和衬底间距不变,在不同激光能量条件下,得到一系列纳米Si薄膜。利用喇曼散射光谱和X射线衍射谱对晶粒尺寸进行了计算和分析,取得了几组数据。结果表明,改变脉冲激光能量时,纳米Si晶粒平均尺寸均随能量的增强先增大后减小;在单脉冲能量为300mJ时制备的纳米Si晶粒平均尺寸最大,为8.58nm。这一结果对纳米硅薄膜制备的研究有积极意义。Abstract: A series of nano-crystalline silicon films were deposited maintaining the same distance between the target and substrate by means of a pulse laser deposition system.The crystalline volume fraction of films and the average grain size were calculated based on Raman scattering and X-ray diffraction spectra.The results show that with the increase of the pulse energy,the average grain size becomes larger at first,and then goes smaller.The largest average grain size is 8.58nm when the pulse laser energy is 300mJ.The results have positive significance to the preparation of nano-crystalline silicon thin film.
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