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高速脊波导激光器寄生电容的分析

Analysis of parasitic capacitance of high speed ridge waveguide laser

  • 摘要: 高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。

     

    Abstract: The high-speed modulated semiconductor lasers are the key devices in the system of high-speed fiber communication and phase control radar systems,etc.The parasitic capacitance of the high speed laser is one of those factors which affect the modulation bandwidth.In order to reduce it,the capacitance of the ridge waveguide structure was analyzed and tested,computer simulation was performed.A conclusion is made that capacitance's value is related to not only the eroded depth of the insulation channel but also the area of the metallization,which is important for the realization of the high-speed modulation of the laser.

     

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