Abstract: Study on electroluminescence from porous silicon(PS) has important application value in silicon-based photoelectron integration.Electrically induced visible light-emitting PS device with structure of ITO/PS/p-Si/Al were fabricated by means of evaporation-anodic oxidation method.The light emission of the device lasted for a few hours under 7.5V forward bias conditions.Luminescent and electronic properties were investigated.Results suggest that ITO thin films should have both high electrical conductivity and optical transmittance in order to achieve light-emitting PS device with fine luminescent and current-voltage properties.