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影响VCSOAs增益饱和特性因素分析

卢静, 罗斌, 潘炜, 罗广军, 李建平, 蔺玉珂

卢静, 罗斌, 潘炜, 罗广军, 李建平, 蔺玉珂. 影响VCSOAs增益饱和特性因素分析[J]. 激光技术, 2007, 31(5): 496-499,502.
引用本文: 卢静, 罗斌, 潘炜, 罗广军, 李建平, 蔺玉珂. 影响VCSOAs增益饱和特性因素分析[J]. 激光技术, 2007, 31(5): 496-499,502.
LU Jing, LUO Bin, PAN Wei, LUO Guang-jun, LI Jian-ping, LIN Yu-ke. Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2007, 31(5): 496-499,502.
Citation: LU Jing, LUO Bin, PAN Wei, LUO Guang-jun, LI Jian-ping, LIN Yu-ke. Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2007, 31(5): 496-499,502.

影响VCSOAs增益饱和特性因素分析

详细信息
    作者简介:

    卢静(1981- ),女,硕士研究生,从事光通信与光放大器方面的研究.

    通讯作者:

    罗斌,E-mail:bluo@home.swjtu.edu.cn

  • 中图分类号: TN248.4

Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers

  • 摘要: 为了改善垂直腔半导体光放大器增益饱和特性,基于其结构上的特点,引入了增益增强因子,修正了边界条件,采用建立腔内光子数与输入信号光功率关系的研究方法,分析了影响垂直腔半导体光放大器增益饱和特性因素。并进行了理论分析和实验论证,取得了影响增益饱和特性的4个关键数据。结果表明,有源区截面积、顶层镜面反射率、抽运功率、自发辐射因子影响着增益饱和特性,优化相关参数,可以将输入饱和功率提高到-2dBm。这一结果对如何改善垂直腔半导体光放大器增益饱和特性是有帮助的。
    Abstract: In order to improve the gain saturation property of vertical-cavity semiconductor optical amplifiers(VCSOAs),based on the structure character,applying gain enhancement factor and modifying the boundary condition,the relation between input signal power and photon density was derived to study the gain saturation property.The calculation result was agreement with the experiment.Four factors affecting property of gain saturation were obtained.The results showed that the active region area,top mirror reflectivity,pump power,spontaneous emission factor affected the property of gain saturation.After optimizing the parameter,the input saturation power could arrive-2dBm.It is useful to improve the gain saturation property of VCSOAs.
  • [1]

    TOMBLING C,SAITOH T.Performance prediction for vertical-cavitysemiconductor laser amplifiers[J].IEEE Journal of Selected Topics in Quantum Electronics,1994,30(11):2491~2499.

    [2]

    KARLSSON A,HOIJER M.Analysis of a VCLAD:vertical-cavity laser amplifier detector[J].IEEE Photonics Technology Laser,1995,5(11):1336~1338.

    [3]

    PIPREK J,BJöRLIN S E,BOWERS E J.Design and analysis of vertical-cavity semiconductor optical amplifiers[J].IEEE Journal of Selected Topics in Quantum Electronics,2001,37(1):127~134.

    [4]

    ROYO P,KODA R,COLDREN A.Vertical cavity semiconductor optical amplifiers:comparison of fabry-perot and rate equation approaches.[J].IEEE Journal of Selected Topics in Quantum Electronics,2002,38(3):279~284.

    [5]

    BJöRLIN S E.Carrier-confined vertical-cavity semiconductor opticalamplifiers for higher gain and efficiency[J].IEEE Journal of Selected Topics in Quantum Electronics,2003,9(5):1374~1384.

    [6]

    ADAMS J M,COLLINS V J,HENNING D I.Analysis of semiconductor laser optical amplifiers[J].IEE Proceedings,1985,132(1):58~63.

    [7]

    SAITOH T,MUKAI T.Theoretical analysis and fabrication of antireflection coatings on laser diode facets[J].IEEE Journal of Light-wave Technology,1985,3(2):288~293.

    [8]

    XU J H,LUO B,PAN W et al.Optical design of the gain bandwidth of vertical-cavity semiconductor optical amplifiers based on the couple cavities[J].Laser Technology,2006,30(1):60~63(in Chinese).

    [9]

    GUO Ch Zh,CHEN Sh L.On micro cavity effect in vertical cavity surface emitting quantum well laser with multilayer hetero-structure reflectors[J].Acta Physica Sinica,1997,46(9):1731~1743(in Chinese).

    [10]

    ZHAO Zh,PAN W,LUO B et al.Numerical analyses on gain properties of vertical-cavity semiconductor optical amplifiers[J].Laser & Infrared,2004,34(2):116~118(in Chinese).

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出版历程
  • 收稿日期:  2006-06-11
  • 修回日期:  2006-11-13
  • 发布日期:  2007-10-24

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