Abstract: To describe ultrashort laser ablation on semiconductor surface,numerical simulation of the double-temperature equation is performed by finite-difference method.The temperature fields of femtosecond,picosecond pulses laser ablation on semiconductor are showed.The results indicate that metal and semiconductor have the same time of the couple with carrier temperature and lattice temperature.Laser pulse power density is the main factors affecting temperature of carrier,the simulation results are accorded with the experiment reported by others.