Abstract: In order to obtain excellent optoelectronic integrated device and optical waveguide,it is significant to study the preparation and attribute of nano-porous oxidized silicon.Porous silicon samples were prepared by electrochemical anodic oxidization.After oxidization at high temperature,nano-porous oxidized silicon samples was fabricated.The samples of porous silicon and nano-porous oxidized silicon were detected with photoluminescence and Fourier transform infrared spectroscopy.The test results demonstrated that compared with porous silicon,the photoluminescence(PL) peak of porous oxidized silicon shifted to a shorter wavelength,i.e.so called "blue shift",along with obvious reduction of PL intensity.The surface of porous silicon was saturated by hydrogen,however,the most of Si—H bonds on the surface of nano-porous silicon were replaced by Si—O bonds after oxidization.The peak blue shift was induced by quantum confinement effect.The reduction of PL intensity was induced by the reduction of radioactive recombination center on the nano-crystalline surface and the diminution of nano-crystalline Si column's size.