A shortened procedure of micro-electromechanical systems fabrication by means of femtosecond laser
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摘要: 为探讨采用飞秒激光直接刻写样品取代传统光刻掩膜版方式来实现微机电系统(MEMS)加工短流程工艺的可行性,采用中心波长为800nm、脉宽为50fs的激光对100硅片(薄膜为350nm～500nm厚的氮化硅)进行实验,分析了飞秒激光材料加工特性.分析和实验结果表明,飞秒激光比纳秒、皮秒激光更适用于短流程工艺.MEMS加工短流程工艺减少了加工流程,缩短了加工周期.通过对激光脉冲能量和平台移动速度的控制可实现精确微加工.Abstract: In order to study the feasibility of micro-electromechanical systems(MEMS) short processing technique with application of directly writing by means of femtosecond laser instead of traditional lithography,features of the material processing by means of femtosecond laser was analyzed and experiment was executed on 100 silicon wafers(SiN film thickness:350nm~500nm) by using a laser with 800nm wavelength and 50fs pulse width.Theoretic analysis and experimental result showed that femtosecond laser was superior for short process to nanosecond laser.MEMS shortened the processing flow and its cycle.Precise processing could be realized under precise control of laser pulse energy and workbench moving speed.
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[1] MOORE D F,WILLIAMS J A.Laser prototyping of MEMS structures and SiN cantilevers:experience teaching a practical undergraduate course[J].Science Measurement and Technology,2004,151(2):54-59.
[2] DAVIS K M,MIURA K,SUGIMOTO N,et al.Writing waveguides in glass with a femtosecond laser[J].Opt Lett,1996,21(21):1729-1731.
[3] GLEZER E N,MILOSAVLJEVIC M,HUANG L,et al.Three-dimensional optical storage inside transparent materials[J].Opt Lett,1996,21(24):2023-2025.
[4] NI X Ch,WANG Ch Y,HU M L,et al.Thermal character in organic polymers with nanojoule femtosecond laser ablation[J].Chinese Optics Letters,2003,1(9):547-549.
[5] ANDREAS O.Precise structuring using femtosecond lasers[J].The Review of Laser Engineering,2002,30(5):221-225.
[6] SHEN Zh H,LU J,NI X W.Study of the heating mechanism of a semiconductor irradiated by picosecond and nanosecond laser pulses[J].Chinese Journal of Lasers,1999,26(9):859-863(in Chinese).
[7] LIANG J G.The study of femtosecond laser machining[D].Tianjing:Tianjing University,2005:13-15(in Chinese).
[8] CHICHKOV B N,MOMMA C,NOLTE S.Femtosecon,picosecond and nanosecond of solids[J].Appl Phys,1996,A63(2):109-115.
[9] NOLTE S,MOMMA C,JACOBS H,et al.Ablation of metals by ultra-short laser pulses[J].J O S A,1997,B14(10):2716-2722.
[10] STUART B C,FEIT M D,HERMAN S,et al.Nanosecond-to-femtosecond laser-induced breakdown in dielectrics[J].Phys Rev,1996,B53(4):1749-1761.
[11] OU Y H,ZHOU M L,ZHANG Zh Y.A study on silicon deep etching technology[J].Microelectronics,2004,34(1):45-47(in Chinese).
[12] HUTTON R S,PORT S N,SCHIFFRIN D J,et al.Photoelectrochemical imaging of the etching and passivation of silicon in aqueous KOH[J].Journal of Electroanalytical Chemistry,1996,418(2):153-158.
[13] WEN L,WANG J Y,LIU D G.Dry etching technique for silicon of high aspect ratio in MEMS device fabrication[J].MEMS Device Technology,2004,41(6):30-34(in Chinese).
[14] LONG Y H,XIONG L C,SHI T L.The quality study on excimer laser-induced electrochemical etching of silicon[J].Laser Technology,2006,30(3):235-237(in Chinese).
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