[1]
|
MOORE D F,WILLIAMS J A.Laser prototyping of MEMS structures and SiN cantilevers:experience teaching a practical undergraduate course[J].Science Measurement and Technology,2004,151(2):54-59. |
[2]
|
DAVIS K M,MIURA K,SUGIMOTO N,et al.Writing waveguides in glass with a femtosecond laser[J].Opt Lett,1996,21(21):1729-1731. |
[3]
|
GLEZER E N,MILOSAVLJEVIC M,HUANG L,et al.Three-dimensional optical storage inside transparent materials[J].Opt Lett,1996,21(24):2023-2025. |
[4]
|
NI X Ch,WANG Ch Y,HU M L,et al.Thermal character in organic polymers with nanojoule femtosecond laser ablation[J].Chinese Optics Letters,2003,1(9):547-549. |
[5]
|
ANDREAS O.Precise structuring using femtosecond lasers[J].The Review of Laser Engineering,2002,30(5):221-225. |
[6]
|
SHEN Zh H,LU J,NI X W.Study of the heating mechanism of a semiconductor irradiated by picosecond and nanosecond laser pulses[J].Chinese Journal of Lasers,1999,26(9):859-863(in Chinese). |
[7]
|
LIANG J G.The study of femtosecond laser machining[D].Tianjing:Tianjing University,2005:13-15(in Chinese). |
[8]
|
CHICHKOV B N,MOMMA C,NOLTE S.Femtosecon,picosecond and nanosecond of solids[J].Appl Phys,1996,A63(2):109-115. |
[9]
|
NOLTE S,MOMMA C,JACOBS H,et al.Ablation of metals by ultra-short laser pulses[J].J O S A,1997,B14(10):2716-2722. |
[10]
|
STUART B C,FEIT M D,HERMAN S,et al.Nanosecond-to-femtosecond laser-induced breakdown in dielectrics[J].Phys Rev,1996,B53(4):1749-1761. |
[11]
|
OU Y H,ZHOU M L,ZHANG Zh Y.A study on silicon deep etching technology[J].Microelectronics,2004,34(1):45-47(in Chinese). |
[12]
|
HUTTON R S,PORT S N,SCHIFFRIN D J,et al.Photoelectrochemical imaging of the etching and passivation of silicon in aqueous KOH[J].Journal of Electroanalytical Chemistry,1996,418(2):153-158. |
[13]
|
WEN L,WANG J Y,LIU D G.Dry etching technique for silicon of high aspect ratio in MEMS device fabrication[J].MEMS Device Technology,2004,41(6):30-34(in Chinese). |
[14]
|
LONG Y H,XIONG L C,SHI T L.The quality study on excimer laser-induced electrochemical etching of silicon[J].Laser Technology,2006,30(3):235-237(in Chinese). |