Characteristics and development of optical pumping vertical-external-cavity surface-emitting lasers
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摘要: 介绍了光抽运半导体垂直外腔面发射激光器的结构特点、设计原理及其性能优势,综合评述该领域的最新研究进展,并探讨该类型激光器的发展前景和技术发展方向.
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关键词:
- 光电子学 /
- 垂直外腔面发射激光器 /
- 光抽运 /
- 分布布喇格反射镜 /
- 超短脉冲
Abstract: The properties and advantages of optical pumping semiconductor vertical-external-cavity surface-emitting laser(VECSEL) are introduced and the latest device development is demonstrated.On the basis of these analyses,the application potential and technology direction in the areas are pointed out. -
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[1] KUZNETSOV M,HAKIMI F,SPRAGUE R et al.High power(>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams[J].IEEE Photonics Technology Letters,1997,9(8):1063～1065.
[2] LUTGEN S,ALBRECHT T,BRICK P et al.8W high-efficiencycontinuous-wave semiconductor disk laser at 1000 nm[J].A P L,2003,82(21):3620～3622.
[3] HASTIE J E,CALVEZ S,DOWSON M D.High power CW red VECSEL with linearly polarized TEM00 output beam[J].Optics Express,2005,13(1):77～81.
[4] HOOGLAND S,GARNACHE A,SAGNES I et al.Picosecond pulsegeneration with 1.5pm passively modelocked surface-emitting semiconductor laser[J].Electron Lett,2003,39(1):846～847.
[5] HOLM M A,BURNS D,CUSUMANO P et al.High-power diode-pumped AlGaAs surface-emitting laser[J].Appl Opt,1999,38(27):5781～5784.
[6] KUZNETSOV M,HAKIMI F,SPRAGUE R et al.Design and characteristics of high-power(0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM beams[J].IEEE Journal of Selected Topics in Quantum Electronies,1999,5(3):561～573.
[7] LINDER N,KARNUTSCH C,LUFT J et al.High power 660nm optically pumped semiconductor thin disk laser[A].IEEE/LEOS Summer Topics[C].Ingenieria:IEEE,2002.5～6.
[8] PARK S H,KIM J,JEON H et al.Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme[J].A P L,2003,83(11):2121～2123.
[9] SYMONDS C,SAGNES I,GARNACHE A et al.Continuous-wave operation of monolithically grown 1.5μm optically pumped vertical-external-cavity surface-emitting lasers[J].Appl Opt,2003,42(33):6678～6681.
[10] HOPKINS J M,SMITH S A,JEON C W et al.0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32μm[J].Electron Lett,2004,40(1):30～31.
[11] CERUTTI L,GARNACHE A,GENTY F et al.Low threshold,room temperature laser diode pumped Sb-based VECSEL emitting around 2.1μm[J].Electron Lett,2003,39(3):290～292.
[12] HASTIE J E,HOPKINS J M,CALVEZ S et al.0.5W single transverse-mode operation of an 850nm diode-pumped surface-emitting semiconductor laser[J].IEEE Photonics Technology Letters,2003,15(7):894～896.
[13] HOOGLAND S,DHANJAL S,TROPPER A C et al.Passively mode-locked diode-pumped surface-emitting semiconductor laser[J].IEEE Photonics Technology Letters,2000,12(9):1135～1137.
[14] GARNACHE A,HOOGLAND S,TROPPER A C et al.Sub-500-fssoliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power[J].A P L,2002,80(21):3892～3894.
[15] ALFORD W J,RAYMOND T D,ALLERMAN A A.High power and good beam quality at 980nm from a vertical external-cavity surface-emitting laser[J].J O S A,2002,B19(4):663～666.
[16] CHILLA J,BUTTERWORTH S,ZEITSCHEL A et al.High power optically pumped semiconductor lasers[J].Proc SPIE,2004,5332:143～150.
[17] HäRING R,PASCHOTTA R,GINI E et al.Picosecond surface-emitting semiconductor laser with>200mW average power[J].Electron Lett,2001,37(12):766～767.
[18] HäRING R,PASCHOTTA R,ASCHWANDEN A et al.High-power passively mode-locked semiconductor lasers[J].IEEE J Q E,2002,38(9):1268～1275.
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