激光处理GaN薄膜的研究

The research of laser treatment of GaN thin film

摘要: 通过激光损伤实验,报道了GaN薄膜10.6μm CO2激光的损伤阈值是64 J/cm2;为了改善GaN薄膜质量,对其进行了10.6μm CO2激光辐照处理,结果表明,处理后GaN薄膜的缺陷密度明显降低.并对机理进行了分析.

Abstract: Through laser damage experiment,the damage threshold of GaN thin film at 10.6μm is reported,i.e.64J/cm2.To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser.The results show that the defect density is decreased great after treatment.Finally,treating mechanism is analyzed.