二氧化钒薄膜的退火组分变化及光学特性研究

详细信息

Appealing component changes and optical properties of VO2 thin films

Institute of Opto-electronics, Harbin Institute of Technology, Harbin 150001, China

摘要: 为得到高纯度的VO2薄膜,对其制备参数进行了探索。VO2薄膜用磁控溅射法制备。对不同条件下制备的VO2薄膜用X射线电子能谱仪(XPS)测试,并通过拟合来得到3,4,5价钒在薄膜中所占的比例。为提高4价钒的含量对薄膜进行了退火处理,分析了退火对氧化钒薄膜中4价钒含量的影响。结果表明,VO2薄膜对10.6μm激光的透过率从60℃时的74%变到78℃时的11.93%,发生了相变。
- 激光防护 /
- 相变 /
- 磁控溅射 /
- 二氧化钒
Abstract: Preperation parameters are studied to get highly pure vanadium dioxide thin films.VO2 thin films are deposited by magnetron sputtering methods.VO2 thin films prepared in different conditions are studied by means of X-ray photoelectron spectroscopy (XPS), constituents of the VO3+,VO4+ and VO5+ in the film are gotten by fitting the XPS peaks with 100% Guassian like curves.Then the thin films are annealed to increase the percentages of the VO4+, the effect of annealing is analyzed.The transmittance at 10.6 μm changed from 74% at 60℃ to 11.93% at 74℃, semiconductor-to-metal phase transition occurs.
- laser protection /
- phase transition /
- magnetron sputtering /
- vanadium dioxide

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