GaN基激光器光增益和内部光损耗的测量

基金项目:

国家八六三计划资助项目(2001AA313110);国家自然科学基金资助项目(60276010);北京市科技计划资助项目(H030430020230)

详细信息

Measurement of optical gain and optical internal loss in GaN-based laser

1.
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;
2.
Research Center for Wide Gap Semiconductors, Peking University, Beijing 100871, China

摘要: 采用变条长方法实验测量了GaN基短波长激光器样品的放大自发发射谱,确定了样品的光增益和光损失系数,并发现了样品中存在着严重的光增益饱和的现象。证实了变条长方法对于研究GaN基短波长激光器性能的可行性。进一步比较了两种不同结构的激光器样品在增益和增益饱和方面的性能差别,同时指出样品外延时生成的裂纹,可能是造成这一差别的原因。
- 放大的自发发射谱 /
- 变条长方法 /
- 光损耗 /
- 光增益 /
- 增益饱和
Abstract: To assess the performance of a semiconductor laser,knowledge of gain and loss at a known pumping level is essential.Both the gain and the loss coefficients were obtained through analyzing amplified spontaneous emission (ASE) measured with variable stripe length (VSL) method,and serious gain saturation phenomenon was observed in the process.The results confirm the feasibility of the VSL method in studying the performance of GaNLD samples.Performance of LDs with two different structures in gain and gain saturation were compared through VSL method,and the reason that leads to the differen ce was discussed.
- amplified spontaneous emission /
- variable strip elength method /
- optical loss /
- optical gain /
- gain saturation

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