高级检索

VCSOA中光双稳环宽控制的理论分析

邓果, 潘炜, 罗斌, 严云富, 李孝峰, 赵峥

邓果, 潘炜, 罗斌, 严云富, 李孝峰, 赵峥. VCSOA中光双稳环宽控制的理论分析[J]. 激光技术, 2005, 29(1): 74-76.
引用本文: 邓果, 潘炜, 罗斌, 严云富, 李孝峰, 赵峥. VCSOA中光双稳环宽控制的理论分析[J]. 激光技术, 2005, 29(1): 74-76.
DENG Guo, PAN Wei, LUO Bin, YAN Yun-fu, LI Xiao-feng, ZHAO Zheng. Theoretical analysis of the loop width control of bistablity in VCSOA[J]. LASER TECHNOLOGY, 2005, 29(1): 74-76.
Citation: DENG Guo, PAN Wei, LUO Bin, YAN Yun-fu, LI Xiao-feng, ZHAO Zheng. Theoretical analysis of the loop width control of bistablity in VCSOA[J]. LASER TECHNOLOGY, 2005, 29(1): 74-76.

VCSOA中光双稳环宽控制的理论分析

基金项目: 

国家自然科学基金资助项目(10174057);四川省应用基础研究基金资助项目(03JY029-048-1)

详细信息
    作者简介:

    邓果(1979- ),男,博士研究生,主要从事光纤通信与光器件的研究.潘炜,通讯联系人.E-mail:weipan80@sohu.com

    邓果(1979- ),男,博士研究生,主要从事光纤通信与光器件的研究.潘炜,通讯联系人.E-mail:weipan80@sohu.com

    通讯作者:

    潘炜,E-mail:weipan80@sohu.com

  • 中图分类号: TN722

Theoretical analysis of the loop width control of bistablity in VCSOA

  • 摘要: 基于法布里珀罗(FP)腔光束干涉理论,建立垂直腔半导体光放大器(VCSOA)的双稳模型.针对近期实验参数,仿真研究了透射模式下VCSOA的双稳特性,找到实现双稳环宽控制的3种基本途径,即适当增大偏置电流、保持偏置与阈值比不变情况下提高顶端面反射率、减小初始相位失谐量都会使双稳环宽变宽.
    Abstract: Based on the beam interferential theory of Fabry-Perot semiconductor laser,a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established. According to recently experimental parameters,the bistable characteristics of VCSOA are investigated by simulation and three methods of controlling the width of hysteresis loop have been achieved:to enhance the bias current properly,increase top mirror reflectivity of VCSOA without changing the ratio of bias current versus threshold current or decrease initial phase detuning.All the methods can increase the loop width of the hysteresis loop.
  • [1]

    PAKDEEVANICH P,ADAMS M J. Measurements and modeling of reflective bistability in 1.55μm laser diode amplifiers [J]. IEEE J Q E,1999,35(12):1894~1903.

    [2]

    WEN P, SANCHEZ M, GROSS M et al. Vertical-cavity optical AND gate [J]. Opt Commun,2003,219(2):383~387.

    [3]

    ADAMS M J,WESTLAKE H J,O' MAHONY M J et al. A comparison of active and passive optical bistability in semiconductors [J]. IEEE J Q E,1985,21 (9):1498~1502.

    [4] 陈建国,李焱,陆洋et al.用阈值表达式研究长外腔半导体激光器的双稳特征[J].光学学报,2000,20(8):1015~1020.
    [5]

    ROYO P, KODA R, COLDREN L A. Vertical cavity semiconductor optical amplifiers:comparison of Fabry-Perot and rate equation approaches [J]. IEEE J Q E,2002,38 (3):279~284.

    [6]

    TOMBLING G, SAITOH T, MUKAI T. Performance predictions for vertical cavity semiconductor laser amplifiers [J]. IEEE J Q E, 1994,30(11):2491~2498.

    [7]

    SANCHEZ M, WEN P, GROSS M et al. Nonlinear gain in vertical-cavity semiconductor optical amplifiers [J]. IEEE Photon Technol Lett,2003,15(1):1~3.

    [8]

    AGRAWAL G P, DUTTA N K. Semiconductor lasers [M]. 2nd ed,New York.van Nostrand Reinhold Press, 1993. 495~499.

    [9] 张晓霞,潘炜,刘永智et al.降低VCSEL激射阈值途径的理论研究[J].光电子·激光,2002,13(12):1211~1214.
    [10] 潘炜,张晓霞,罗斌et al.端面反射率的波长特性对外腔半导体激光器调谐范围的影响[J].光学学报,2001,2l(8):975~979.
计量
  • 文章访问数:  1
  • HTML全文浏览量:  0
  • PDF下载量:  7
  • 被引次数: 0
出版历程
  • 收稿日期:  2003-12-14
  • 修回日期:  2004-02-22
  • 发布日期:  2005-01-24

目录

    /

    返回文章
    返回