调整VO2薄膜相变特性和TCR的制备及辐照方法

Innovation for preparation condition and electron irradiation for phase transition properties and TCR in VO2 thin film

摘要: 采用不同的真空还原时间、真空退火温度和衬底制备出了VO2薄膜,并对制备出的薄膜进行电子辐照.通过测试辐照前后的VO2薄膜相变电学性能及低温半导体相电阻温度系数(TCR),表明不同的制备工艺和不同注量的电子辐照可明显改变VO2薄膜相变过程中电学性能,提高薄膜的电阻温度系数.对影响VO2热致相变薄膜电学性能及电阻温度系数的因素进行了讨论.

Abstract: VO2 thin films are prepared under different conditions and irradiated by electron beam with fluence of 1013/cm2～1017/cm2.The phase transition properties and temperature coefficient of resistance are measured with or without electron irradiation.The results show that different preparation conditions and electron irradiation can change the phase transition properties and TCR in VO2 thin films.Other factors that affect the electrical properties and TCR in VO2 thin films have also been discussed.