畸变的掩模对光刻图形质量的影响

1.
四川大学物理系, 成都, 610064;
2.
Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OXON, OX11 0QX, U. K.

基金项目:

微细加工光学技术国家重点实验室基金;国家自然科学基金;博士点基金资助项目

详细信息

Effect of distortion of mask on photolithography pattern quality

1.
Department of Physics, Sichuan University, Chengdu, 610064;
2.
Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OXON, OX11 0QX, U. K.

摘要: 基于描述激光直写邻近效应的双高斯函数之差抗蚀剂模型,计算分析了邻近效应带来的掩模加工的偏差,及其对光刻图形质量的影响.模拟结果表明,当掩模的特征尺寸为1.5μm时,激光直写所加工掩模的相对面积偏差达5%,并对最终的光刻图形的质量产生严重影响.
- 激光直写 /
- 邻近效应 /
- 分辨力 /
- 抗蚀剂模型
Abstract: Following the difference of double Gaussian function describing the proximity effects in laser direct writing,the distortion of the mask and its influence on projection lithography pattern quality are simulated.The results show that the area deviation of the mask fabricated by laser writer is about 5% and make the projection lithography quality worse.
- laser writing /
- proximity effect /
- resolution /
- resist model

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