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调谐外腔半导体激光器输出双稳环的确定

Determination of hysteresis loops for tunable external cavity semiconductor lasers

  • 摘要: 在考察了外腔半导体激光器(ECLD)的振荡频率ν与激光二极管(LD)中载流子密度N(或增益g)、介质的折射率n以及LD第m个模式的共振频率νm间的关系之后,利用微扰法对LD的N-ν曲线上被前人错判为不稳定的两个关键区段重新进行了分析,结果表明这两个区段是稳定区段,据此,可以确定在对ECLD进行调频的过程中其增益介质的N-ν曲线上出现的双稳环.

     

    Abstract: Investigations have been made to determine relations between the oscillation frequency ν of the ECLD and threshold carrier density N (orgain coefficient g),refractive indexn as well as mode frequency Nν of the diode. Afterwards,the perturbation method has been adopted to check the stability of the state represented by the points on the N-ν curve. The results indicate that two segments of vital importance for the formation of the loop,which were formerly misjudged as representing non stable states,represent stable state. Therefore,the hysteresis loop on the N-ν curve can be accomplished.

     

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