单模AlGaAs/GaAs脊形波导量子阱半导体激光器
Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers
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摘要: 本文报道用分子束外延设备研制梯度折射率分别限制式单量子阱AlGaAs/GaAs脊形波导半导体激光器。该激光器具有良好的性能,条宽5μm器件室温阈值电流23mA,线性连续输出单模激光功率大于15mW。Abstract: Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.
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