Abstract: Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.