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单模AlGaAs/GaAs脊形波导量子阱半导体激光器

曹三松

曹三松. 单模AlGaAs/GaAs脊形波导量子阱半导体激光器[J]. 激光技术, 1996, 20(3): 177-181.
引用本文: 曹三松. 单模AlGaAs/GaAs脊形波导量子阱半导体激光器[J]. 激光技术, 1996, 20(3): 177-181.
Cao Sansong. Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers[J]. LASER TECHNOLOGY, 1996, 20(3): 177-181.
Citation: Cao Sansong. Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers[J]. LASER TECHNOLOGY, 1996, 20(3): 177-181.

单模AlGaAs/GaAs脊形波导量子阱半导体激光器

Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers

  • 摘要: 本文报道用分子束外延设备研制梯度折射率分别限制式单量子阱AlGaAs/GaAs脊形波导半导体激光器。该激光器具有良好的性能,条宽5μm器件室温阈值电流23mA,线性连续输出单模激光功率大于15mW。
    Abstract: Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.
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    Yariv A.Circuit and Devices,1989,5(6):25

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出版历程
  • 收稿日期:  1995-02-16
  • 发布日期:  1996-05-24

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