水平式MOCVD系统生长速率均匀性的研究
Research on growth rate uniformity in horizontal MOCVD systems
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摘要: 本文讨论了影响生长速率的因素,如主载气流量、金属有机源流量(在一定蒸汽压下),衬底放置位置,及掺杂和非掺杂情况等.对实验结果进行了讨论,并与其它文献进行了比较.着重阐述了改善侧向均匀性问题.Abstract: This paper discusses the main factor of affecting growth rate in MOCVD system,such as the flow rate of carriers gas and organometallic source, position of substrate,doping and undoping, etc.The experimental results are discussed and comparedwith other literatures.The lateral uniformity problem has been emphasizes.
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