激光对CCD器件破坏时几种阈值的测量
Measurement of laser damaging thresholds of CCD devices
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摘要: 本文简要回顾了近十年来激光CVD(LCVD)技术的发展概况及其在金属、电介质和半导体薄膜生长方面的应用情况。阐明了这种新发展起来的成膜技术不仅因其生长的低温化能够给器件带来优良的电学特性,同时也可利用其高精度的膜厚控制特性获得新结构的材料和器件。作者还对该技术的广泛的应用前景予以展望和肯定。Abstract: This paper analyzes the interaction process of laser beam and MOS CCD devices,and investigates the damage thresholds of CCD devices.In the experimental study,using a Q-switched YAG laser to irradiate a CCD device,the heat melting threshold,optical breaking threshold and direct damaging threshold of CCD are mea-sured,and the laser energy threshold causing whole CCD device failure is measured too.
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