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等离子体辅助镀膜

Ion-assisted deposition using a new plasma source

  • 摘要: 本文介绍了等离子体辅助镀膜技术以及相应的高真空等离子体源.这种新型等离子体源属于空心冷阴极结构,工作气压在1×10-3pa~10-1pa,它的最大优点在于能够直接电离氧化性气体而不烧毁阴极.采用探针法测定了氩等离子体中辅助离子的能量范围在50~80Ve之间,并在氩气、氧气的等离子体中分别沉积了单层ZnS薄膜和SiO2薄膜.实验结果表明,生成的薄膜具有良好的光学和机械性能.

     

    Abstract: The principles of plasma ion-assisted deposition(IAD)and a new high vacuum plasma sotirce are introduced.With a hollow cold cathode discharge,the plasma sotirce can be operated in ambient pressure from 1×10-3pa to 1×10-1pa,the reactive gas and the nonreactive gas can be used as working gas.The energy of Ar- in argon plasma,h1eatstired with a Longmuir probe,is 50~80eV,depending on pressure and discharge current density.It has been experimentally confirmed that both the optical properties and mechanical properties of single-layer films of ZnS and SiO2 prepared in argon plasma and oxygen plasma have been improved considerably as compared to those films obtained with traditional vapor deposition.

     

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