Study on scribing parameters of sapphire substrate with pulse green laser
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摘要: 为了提高划切蓝宝石的成品率和划切效率，研究了脉冲绿激光（波长532nm）的偏振性、脉冲激光能量、激光焦点位置、扫描速率、扫描次数等工艺参量对蓝宝石基片划切质量的影响。结果表明，脉冲绿激光划切蓝宝石基片时，扫描方向平行于入射面线偏振方向，焦点位置为负离焦50μm，可以获得良好的微划槽；脉冲激光能量增加，划槽深度和宽度增加；扫描速率增加，切槽深度减小，划槽宽度先增加后减小；扫描次数增加，划槽深度和宽度增加。这些结果对合理选择激光划切蓝宝石基片工艺参量以获得较好质量的刻槽有一定帮助。Abstract: To improve the yield rate and scribing efficiency of sapphire substrate, the effect of polarization direction, laser power, focus position, cutting speed, scanning times on the scribing quality of sapphire substrate with pulse green laser (λ=532nm) was studied.The results show that narrow and deep grooves can be obtained when the polarization direction is parallel to the incidence plane and the laser focus position is negative defocus 50μm when scribing sapphire substrate with pulse green laser. The groove depth and width increase while the pulse laser power increases. The groove depth decreases and the groove width increases at first and then decreases with the increase of the scanning speed. The groove depth and width increase with the increase of the scanning times. The results are helpful for selection of reasonable laser scribing technical parameters to achieve optimal groove performance.
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Keywords:
- laser technique /
- laser scribing /
- sapphire /
- 532nm laser /
- process parameters study
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