Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition
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摘要: 硅基光电集成技术是当代高速信息化的重要发展方向之一。为了研究制备在硅衬底上的新型发光材料,突破Nd:YAG固体激光工作物质主要是晶体、透明陶瓷等固体形态的限制,采用电子束蒸发沉积工艺,在硅(100)衬底上制备了Nd:YAG薄膜,并对Nd:YAG薄膜的表面形貌、晶体结构、光学特性进行了测试。X射线和扫描电子显微镜测试结果显示,Nd:YAG薄膜经1100℃真空高温退火处理1h后有效结晶,采用钛蓝宝石激光器输出808nm激光激发,液氮冷却的InGaAs阵列探测器室温下得到Nd:YAG薄膜的1064nm主荧光峰的荧光光谱。结果表明,采用电子束蒸发沉积和后续高温退火工艺可以在硅衬底上制备Nd:YAG晶体薄膜。Abstract: Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.
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Keywords:
- thin films /
- Nd:YAG /
- electron beam evaporation /
- photoluminescence
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