null
-
摘要: 为了研究Eu3+,Li+共掺杂的ZnO薄膜结构与发光性质,采用脉冲激光沉积方法在P型单晶Si（111）衬底上制备了Eu3+,Li+共掺杂的ZnO薄膜,其中,Eu3+作为发光中心,而Li+作为低价电荷的补偿离子和发光敏化剂。分别对样品进行了X射线衍射谱测试和光致发光谱分析。得出的数据中X射线衍射谱显示,Eu3+,Li+共掺杂的ZnO薄膜具有c轴择优取向,X射线衍射谱中除ZnO晶向以外没有出现其它结晶峰;Eu3+,Li+共掺杂的ZnO薄膜的光致发光谱与ZnO纯晶体薄膜的发射光谱基本相似,但是掺杂ZnO薄膜的紫外发光峰却出现红移现象,峰值位于382nm处,且发光峰也不尖锐。当以395nm的激发光照射样品时,在光致发光光谱中观察到了稀土Eu3+在594nm,613nm附近的特征发光峰。结果表明,掺杂元素Eu3+,Li+均已进入到ZnO晶格中,形成了以Eu3+为发光中心的ZnO纤锌矿结构。
-
关键词:
- null
Abstract: In order to study the property of Eu3+ and Li+ co-doped ZnO thin film, it was deposited on the P-type Si (111) substrate by means of pulsed laser deposition(PLD)method with Eu3+ as luminous center and Li+ as the low charged compensated ions and the sensitizer. The photoluminescent(PL) spectra and the X-ray diffraction(XRD) spectra of the film were measured to analyze the crystal structure and photoluminescent property. Through XRD, it can be seen that the ZnO:Eu3+，Li+ film was highly c-axis oriented. In the XRD spectrum, no other crystal orientations were observed except the ZnO crystal orientation. The doping of Eu3+ into ZnO lattice introduced tensile stress, making ZnO crystal lattice spacing larger; but as the oxygen pressure increased, the crystal lattice spacing and lattice constant both had a smaller trend. The PL spectra of the Eu3+, Li+ co-doped ZnO thin film was similar with that of pure ZnO films, but the UV emission peak showed a red-shift phenomenon at about 382nm, and the emission peak was not sharp. When irradiated under the wavelength of 395nm, obvious emission at the wavelength of about 594nm，613nm from the rare-earth element of Eu3+ was observed in the photoluminescence spectra. All the results indicate that the doping elements of Eu3+ and Li+ have incorporated into the crystal lattice of ZnO, and conform the wurtzite structure with Eu3+ as its luminescent centre. -
-
[1] ZHANG D H,WANG Q P,XUE Zh Y.Ultra violet photoluminescence of ZnO films on different substrates[J].Acta Physica Sinica，2003,52(6):1484-1487(in Chinese).
[2] LIN B X,FU Zh X,JIA Y B,et al.The ultra violet and green photoluminescence centers in un-doped zinc oxide films[J].Acta Physica Sinica,2001,50(11):2208-2211(in Chinese).
[3] LEONG E S P,YU S F,LAU S P.Directional edge emitting UV random laser diodes[J].Applied Physics Letters,2006,89(22):2211-2219.
[4] SONG G L,SUN K X.Study on the visible emission mechanism of nanocrystalline ZnO thin films[J].Acta Photonica Sinica,2006,35(3):389-393(in Chinese).
[5] LU Sh Ch,SONG G L,XIAO Zh Y,et al.Preparation and nano-crystals ZnO powder and study on its luminescence[J].Chinese Journal of Lumin,2002,23(3):306-310(in Chinese).
[6] CHE P,MENG J,GUO L.Oriented growth and luminescence of ZnO:Eu flms prepared by sol-gel process[J].Journal of Luminescence,2007,122(26):168-171.
[7] ISHIZUMI A,TAKAHASHI Y,YAMAMOTO A,et al.Fabrication and optical properties of Eu3+-doped ZnO nanospheres and nanorods[J].Materials Science and Engineering,2008,B146(1/3):212-215.
[8] WANG M L,HUANG Ch G,HUANG Zh,et al.Synthesis and photoluminescence of Eu-doped ZnO microrods prepared by hydrothermal method[J].Optical Materials,2009,31(10):1502-1505.
[9] SONG G L,SUN K X,YANG Y T.Preparation and photoluminescence investigation of europium-doped zinc oxide nanocrystalline[J].Spectroscopy and Spectral Analysis,2007,27(4):639-642(in Chinese).
[10] CHEN L,ZHANG J H,ZHANG X,et al.Synthesis and optical properties of Eu3+,Li+ codoped ZnO:Zn phosphors[J].Journal of Optoelectronics·Laser,2008,19(5):632-635(in Chinese).
[11] YUDATE S,FUJII T,SHIRAKATA S.Structural properties of Eu-doped GaN flms prepared by RF magnetron sputtering[J].Thin Solid Films,2008,517(4):1453-1456.
[12] XU S Y,GE W P,WAN G L,et al.Experimental research of the sensitization effect of Eu3+,Sm3+,Tb3+and TTFA polymers[J].Laser Technology,2008,32(6):579-581(in Chinese).
[13] LIU Sh M,LIU F Q,ZHANG Zh H.Photoluminescence of ZnO:Tb nanoparticles[J].Acta Physica Sinica,2000,49 (11):2307-2309(in Chinese).
[14] LIU Sh M,XU Zh,LIU F Q,et al.Energy transfer between rare earth ions and nanocrystalline matrix in rare earth doped ZnS nanocrystals[J].Journal of the Chinese Rare Earth Society,2001,19 (6):566-569(in Chinese).
[15] LU Zh Y,HE F F,XU P Ch,et al.Effects of heat-treatment temperature on Eu3+ and Li+ co-doped ZnO photoluminescence by sol-gel process[J].Journal of Wuhan University of Technology Materials Science,2008,23(1):20-23(in Chinese).
[16] KANG M,XIE K N,LU Zh Y,et al.Preparation of nanometer material ZnO:Eu ,Li with red fluorescence by the sol-gel method[J].Journal of Sichuan University (Engineering Science Edition),2005,37(1):65-68(in Chinese).
[17] LIANG D C,LI Q Sh,ZHANG L C,et al.The effect of growth parameters and post-processing on the optical properties of ZnO thin films[J].Laser Journal,2008,29(5):74-76(in Chinese).
[18] CULLITY B D.Elements of X-ray diffraction[M].2nd ed.Hardcover:Addision-Wesley Publishing Company,1978:292-295.
[19] University of Science and Technology of China.Solid luminescence[M].Beijing:Institute of Physics,Chinese Academy of Sciences,1976:374-377(in Chinese).
计量
- 文章访问数: 0
- HTML全文浏览量: 0
- PDF下载量: 11
下载: