532nm激光对面阵和线阵CCD损伤效应实验研究

Experimental study on 532nm laser-induced failure of array and linear CCD

摘要: 为了研究面阵CCD和线阵CCD由结构差异所致激光损伤效应的区别,针对这两种类型CCD器件进行了机理分析和对比实验研究。分别测量出波长为532nm的激光对线阵CCD和面阵CCD图像传感器的光饱和串音阈值、所有像素串音阈值和硬损伤阈值。结果表明,面阵CCD的光饱和串音阈值和永久破坏阈值比线阵CCD低,而串音扩散到所有像素的阈值高于后者。反映出线阵CCD由于其1维结构更能抵抗激光的干扰和破坏,而面阵CCD在抵御饱和串音在像素间扩散上比线阵CCD有优势。

Abstract: The mechanism of damage on the linear CCD and array CCD was analyzed. Under the irradiation of 532nm laser, the crosstalk threshold, all-pixel crosstalk threshold and totally damaged threshold of both the types of CCDs were measured. Experimental results show that the crosstalk threshold and permanent damage threshold of array CCD are higher than those of linear CCD,while the all-pixel crosstalk threshold of array CCD is lower.This reflects the linear CCD is more resistant to laser interference and sabotage due to its one-dimension structure, while the array CCD is better at resisting the spread of crosstalk between pixels.