[1] HE Y L,SHI Y.Improving characters of silicon devices using by ncSi:H films[J].Chinese Journal of Semiconductors,2003,24 (s1)192-197(in Chinese).
[2] ZHAO Z X,LI M,ZHAN Y,et al.Band gap model and the I-Vcharacteristic of the nc-Si:H thin films deposited by RF-sputtering[J].Journal of Functional Materials and Devices,2009,15 (3):299302(in Chinese).
[3] WEI W S,WANG T M,ZHANG C X,et al.Preferred growth of nanocrystalline silicon in boron-doped hydrogenated nanocrystalline silicon films[J].Journal of Functional Materials and Devices,2003,9(1):25 30(in Chinese).
[4] ZHANG Q F,ZHU M F,LIU F Z,et al.Study of n-type nc-Si:H films and hetero function solar cells by HWCVD[J].Acta Energiae Solaris Sinica,2006,27 (7):691-694 (in Chinese).
[5] AO Y H,HU S L,LONG H,et al.Study on pulsed laser deposition technology[J].Laser Technology,2003,27(5):453-459(in Chinese).
[6] CHEN C Z,BAO Q H,YAO S S,et al.Pulsed laser deposition and its application[J].Laser Technology,2003,27 (5):443-446 (in Chinese).
[7] TAKEHITO Y,SHIGERU T,YUKA Y,et al.Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas[J].Applied Physics Letter,1996,68(13):1772-1774.
[8] FU G S,WANG Y L,CHU L Z,et al.The size distribution of Si nanaoparticles prepared by pulsed-laser ablation in pure He,Ar or Ne gas[J].Europhysics Letter,2005,69(5):758-762.
[9] WANG Y L,CHU L Z,DENG Z C,et al.Size-uniform and controllable Si nanoparticles obtained by regulating target-to-substrate distance[J].Chinese Journal of Lasers,2009,36(4):989-992(in Chinese).
[10] ZHANG X D,ZHAO Y,ZHU F,et al.Study of vertical non-uniformity of microcrystalline silicon thin film using Raman spectra and AFM[J].Journal of Synthetic Crystals,2004,33 (6):960-964 (in Chinese).
[11] ZHANG L W,ZHAO J T,YANG G,et al.Raman analysis of microstructure of silicon thin films deposited at low temperatures[J].Semiconductor Optoelectronics,2007,28(1):58-59(in Chinese).
[12] QIU S H,CHEN C Z,LIU C Q,et al.Raman analysis of crystalline properties of nano-crystalline silicon thin films prepared at low temperature by PECVD technique[J].Materials Research and Application,2008,2 (4):428-431 (in Chinese).
[13] BRODSKY M H,CARDONA M,CUOMO J J.Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering[J].Physics Review,1977,B16(8):3556-3571.
[14] ZHU L Y,HUANG X F,WANG L,et al.Fabrication of nc-Si array made by pulsed laser consisted constrained interference rystallization[J].Micronanoelectronic Technology,2002,39(7):17-20(in Chinese).
[15] YUAN Z J,LOU Q H,ZHOU J,et al.Flat-top green laser crystallization of amorphous silicon thin film[J].Chinese Journal of Lasers,2009,36 (1):205-209 (in Chinese).
[16] OSSADNIK C,VEPREK S,REGORA I G.Applicability of Raman scattering for the characterization of microcrystalline silicon[J].Thin Solid Films,1999,337 (1/2):148-151.
[17] LI Q S,ZHANG Z C,SONG L,et al.Preparation and properties of nanometer-sized aantimony-doped SnO2 powders[J].Journal of East China University of Science and Technology,2002,28 (2):184-224(in Chinese).
[18] ZHOU Y H,CHEN X J,QIAO Y,et al.Experiment investigation of femtosecond pulse laser deposition[J].Journal of Jianghan University (Natural Science Edition),2007,35 (4):33-36 (in Chinese).
[19] WANG Y L,ZHANG H S,CHU L Z,et al.Influence of ambient gas on average size of Si nanoparticles deposited by pulsed laser ablation[J].Journal of Materials Engineering,2008,10 (61):247-250(in Chinese).