Newly developed techniques for laser dicing wafer

HUANG Fu-min; XIE Xiao-zhu; WEI Xin; HU Wei; YUAN Xue-rui

Volume 36 Issue 3

Mar. 2012

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Newly developed techniques for laser dicing wafer

1.
Faculty of Eletromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China

Corresponding author: XIE Xiao-zhu, xiaozhuxie@gdut.edu.cn ;
Received Date: 2011-09-19
Accepted Date: 2011-11-01

Abstract

Laser dicing semiconductor wafer has advantages of narrow kerf,non-contact processing and high dicing velocity etc.However,there still exist some problems,such as redeposition of melting material,large heat affected zone and cracking easily.In order to overcome these problems,the causes were analyzed and a series of newly-developed methods were introduced in detail from three aspects,i.e.,lasers,optical systems and processing mediums.Simultaneously,the basic principles were described.Furthermore,advantages,disadvantages and applications of laser dicing technique were analyzed,which provides valuable technical references for further research and industrial applications.
- laser technique,
- laser dicing,
- semiconductor wafer,
- influencing factors,
- lasers

References

[1]	MATSUMARU A,TAKATA A,ISHIZAKI K.Advanced thin dicing blade for sapphire substrate[J].Science and Technology of Advanced Materials,2005,6(2):120.
[2]	RAO R,BRADBY J E,WILILAMS J S.Patterning of silicon by indentation and chemical etching[J].Applied Physics Letters,2007,91 (12):123113/1-123113/3.
[3]	SHIUANN L K.Laser as a future direction for wafer dicing:parametric study and quality assessment[C]//31st International Conference on Electronics Manufacturing and Technology.Kuala Lumpur,Malaysia:IEEE,2006:506-509.
[4]	XIE X Zh,HUANG F M,WEIX,et al.Experimental study of laser dicing sapphire substrale by green DPSS laser[J].Proceedings of SPIE,2010,7844:78440T/1-78440T/7.
[5]	KIM D,KIM Y,SEONG K,et al.Evaluation for UV laser dicing process and its reliability for various designs of stack chip scale package[C]//59th Electronic Components and Technology Conference.San Diego,USA:IEEE,2009:1531-1536.
[6]	TOFTNESS R F,BOYLE A,GILLEN D.Laser technology for wafer dicing and microvia drilling for next generation wafers(invited paper)[J].Proceedings of SPIE,2005,5713:54-66.
[7]	LIZOTTE T.Laser dicing of chip scale and silicon wafer scale packages[C]//28th International Electronics Manufacturing Technology Symposium.San Jose,USA:IEEE/CPMT/SEMI(R),2003:1-5.
[8]	ILLY E K,KNOWLES M,GU E,et al.Impact of laser scribing for efficient device separation of LED components[J].Applied Surface Science,2005,249(1/4):354-361.
[9]	LI M W,KEVIN H.Study of silicon micromachining using diodepumped solid-state lasers[J].Processings of SPIE,2004,5339:64-72.
[10]	YOKOTAM A,MATSUO N,KAWAHARA K,et al.Development of dicing technique for thin semiconductor substrates with femtosecond laser ablation[J].Proceedings of SPIE,2002,4637:180-187.
[11]	RICE G,JONES D,KIM K S,et al.Micromachining of gallium nitride,sapphire,and silicon carbide with ultrashort pulses[J].Proceeding of SPIE,2003,5147:299-307.
[12]	CRAWFORD T H R,BOROWIEC A,HAUGEN H K.Femtosecond laser micromachining of grooves in silicon with 800nm pulses[J].Applied Physics,2005,A80(8):1717-1724.
[13]	STOIAN R,ASHKENASI D,ROSENFELD A,et al.Laser ablation of sapphire with ultrashort pulses[J].Proceedings of SPIE,2000,3885:121-131.
[14]	SUDANI N,VENKATAKRISHNAN K,TAN B.Laser singulation of thin wafer:die strength and surface roughness analysis of 80μm silicon dice[J].Optics and Lasers in Engineering,2009,47 (7/8):850-854.
[15]	GU E,JEON C W,CHOI H W,et al.Micromachining and dicing of sapphire,gallium nitride and micro LED devices with UV copper vapour laser[J].Thin Solid Films,2004,453(1):462-466.
[16]	YOSHINO F,SHAH L,FERMANN M,et al.Micromachining with a high repetition rate femtosecond fiber laser[J].Journal of Laser Micro/Nanoengineering,2008,3(3):157-162.
[17]	SHAH L,FERMANN M E.High power femtosecond fiber chirped pulse amplification system for high speed micromachining[J].Journal of Laser Micro/Nanoengineering,2006,1 (3):176-180.
[18]	OHMURA E,FUKUYO F,FUKUMISTU K,et al.Internal modified-layer formation mechanism into silicon with nanosecond laser[J].Journal of Achievements in Materials and Manufacturing Engineering,2006,17 (1/2):381-384.
[19]	OHMURA E,KUMAGAI M,NAKANO M,et al.Analysis of processing mechanism in stealth dicing of ultra thin silicon wafer[J].Journal of Advanced Mechanical Design Systems and Manufacturing,2008,2(4):540-549.
[20]	DELPHINE P,AKOS S,FRANK W,et al.Particle-free semiconductor cutting using the water jet guided laser[J].Proceedings of SPIE,2005,5713:240-246.
[21]	PERROTTET D,HOUSH R,RICHERZHAGEN B,et al.Heat damage-free laser-microjet cutting achieves highest die fracture strength[J].Proceedings of SPIE,2005,5713:285-292.
[22]	TAN B,VENKATAKRISHNAN K.Dual-focus laser micro-machining[J].Journal of Modem Optics,2005,52 (17):2603-2611.
[23]	VENKATAKRISHNAN K,TAN B.Thin silicon wafer dicing with a dual-focused laser beam[J].Journal of Micromechanics and Microengineering,2007,17(12):2505-2515.
[24]	MIGLIORE L.Enhancing silicon cutting performance by shaping the focused beam[J].Proceedings of SPIE,2007,6458:64580W/1-64580W/9.
[25]	MIGLIORE L,LEE K S,JEONG-MOOG K,et al.Advances in laser singulation of silicon[C]// Conference Proceeding of ICALEO.San Jose,USA:Laser Institute of America,2006:237-242.
[26]	OSTENDORF A,KULIK C,BAUER T,et al.Ablation of metals and semiconductors with ultrashort pulsed lasers:improving surface qualities of microcuts and grooves[J].Proceedings of SPIE,2004,5340:153 163.
[27]	KLOTZBACH U,MAELZER S,KUNTZE T,et al.Influence of gas on cutting silicon with solid state laser[J].Proceedings of SPIE,2004,5339:488-493.
[28]	DAMINELLI G,KRUGER J,KAUTEK W.Femtosecond laser interaction with silicon under water confinement[J]. Thin Solid Films,2004,467 (1/2):334 341.
[29]	JANG D,KIM D.Liquid-assisted excimer laser micromaehing for ablation enhancement and debris reduction[J].Journal of Laser Micro/Nanoengineering,2006,1(3):221-225.
[30]	ZHU S,LU Y F,HONG M H.Laser ablation of solid substrates in a water-confined environment[J].Applied Physics Letters,2001,79(9):1396-1398.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Newly developed techniques for laser dicing wafer

Corresponding author: XIE Xiao-zhu, xiaozhuxie@gdut.edu.cn;

1. Faculty of Eletromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China

Received Date: 2011-09-19

Accepted Date: 2011-11-01

Available Online: 2012-05-25

Abstract: Laser dicing semiconductor wafer has advantages of narrow kerf,non-contact processing and high dicing velocity etc.However,there still exist some problems,such as redeposition of melting material,large heat affected zone and cracking easily.In order to overcome these problems,the causes were analyzed and a series of newly-developed methods were introduced in detail from three aspects,i.e.,lasers,optical systems and processing mediums.Simultaneously,the basic principles were described.Furthermore,advantages,disadvantages and applications of laser dicing technique were analyzed,which provides valuable technical references for further research and industrial applications.

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Reference (30)

[1]	MATSUMARU A,TAKATA A,ISHIZAKI K.Advanced thin dicing blade for sapphire substrate[J].Science and Technology of Advanced Materials,2005,6(2):120.
[2]	RAO R,BRADBY J E,WILILAMS J S.Patterning of silicon by indentation and chemical etching[J].Applied Physics Letters,2007,91 (12):123113/1-123113/3.
[3]	SHIUANN L K.Laser as a future direction for wafer dicing:parametric study and quality assessment[C]//31st International Conference on Electronics Manufacturing and Technology.Kuala Lumpur,Malaysia:IEEE,2006:506-509.
[4]	XIE X Zh,HUANG F M,WEIX,et al.Experimental study of laser dicing sapphire substrale by green DPSS laser[J].Proceedings of SPIE,2010,7844:78440T/1-78440T/7.
[5]	KIM D,KIM Y,SEONG K,et al.Evaluation for UV laser dicing process and its reliability for various designs of stack chip scale package[C]//59th Electronic Components and Technology Conference.San Diego,USA:IEEE,2009:1531-1536.
[6]	TOFTNESS R F,BOYLE A,GILLEN D.Laser technology for wafer dicing and microvia drilling for next generation wafers(invited paper)[J].Proceedings of SPIE,2005,5713:54-66.
[7]	LIZOTTE T.Laser dicing of chip scale and silicon wafer scale packages[C]//28th International Electronics Manufacturing Technology Symposium.San Jose,USA:IEEE/CPMT/SEMI(R),2003:1-5.
[8]	ILLY E K,KNOWLES M,GU E,et al.Impact of laser scribing for efficient device separation of LED components[J].Applied Surface Science,2005,249(1/4):354-361.
[9]	LI M W,KEVIN H.Study of silicon micromachining using diodepumped solid-state lasers[J].Processings of SPIE,2004,5339:64-72.
[10]	YOKOTAM A,MATSUO N,KAWAHARA K,et al.Development of dicing technique for thin semiconductor substrates with femtosecond laser ablation[J].Proceedings of SPIE,2002,4637:180-187.
[11]	RICE G,JONES D,KIM K S,et al.Micromachining of gallium nitride,sapphire,and silicon carbide with ultrashort pulses[J].Proceeding of SPIE,2003,5147:299-307.
[12]	CRAWFORD T H R,BOROWIEC A,HAUGEN H K.Femtosecond laser micromachining of grooves in silicon with 800nm pulses[J].Applied Physics,2005,A80(8):1717-1724.
[13]	STOIAN R,ASHKENASI D,ROSENFELD A,et al.Laser ablation of sapphire with ultrashort pulses[J].Proceedings of SPIE,2000,3885:121-131.
[14]	SUDANI N,VENKATAKRISHNAN K,TAN B.Laser singulation of thin wafer:die strength and surface roughness analysis of 80μm silicon dice[J].Optics and Lasers in Engineering,2009,47 (7/8):850-854.
[15]	GU E,JEON C W,CHOI H W,et al.Micromachining and dicing of sapphire,gallium nitride and micro LED devices with UV copper vapour laser[J].Thin Solid Films,2004,453(1):462-466.
[16]	YOSHINO F,SHAH L,FERMANN M,et al.Micromachining with a high repetition rate femtosecond fiber laser[J].Journal of Laser Micro/Nanoengineering,2008,3(3):157-162.
[17]	SHAH L,FERMANN M E.High power femtosecond fiber chirped pulse amplification system for high speed micromachining[J].Journal of Laser Micro/Nanoengineering,2006,1 (3):176-180.
[18]	OHMURA E,FUKUYO F,FUKUMISTU K,et al.Internal modified-layer formation mechanism into silicon with nanosecond laser[J].Journal of Achievements in Materials and Manufacturing Engineering,2006,17 (1/2):381-384.
[19]	OHMURA E,KUMAGAI M,NAKANO M,et al.Analysis of processing mechanism in stealth dicing of ultra thin silicon wafer[J].Journal of Advanced Mechanical Design Systems and Manufacturing,2008,2(4):540-549.
[20]	DELPHINE P,AKOS S,FRANK W,et al.Particle-free semiconductor cutting using the water jet guided laser[J].Proceedings of SPIE,2005,5713:240-246.
[21]	PERROTTET D,HOUSH R,RICHERZHAGEN B,et al.Heat damage-free laser-microjet cutting achieves highest die fracture strength[J].Proceedings of SPIE,2005,5713:285-292.
[22]	TAN B,VENKATAKRISHNAN K.Dual-focus laser micro-machining[J].Journal of Modem Optics,2005,52 (17):2603-2611.
[23]	VENKATAKRISHNAN K,TAN B.Thin silicon wafer dicing with a dual-focused laser beam[J].Journal of Micromechanics and Microengineering,2007,17(12):2505-2515.
[24]	MIGLIORE L.Enhancing silicon cutting performance by shaping the focused beam[J].Proceedings of SPIE,2007,6458:64580W/1-64580W/9.
[25]	MIGLIORE L,LEE K S,JEONG-MOOG K,et al.Advances in laser singulation of silicon[C]// Conference Proceeding of ICALEO.San Jose,USA:Laser Institute of America,2006:237-242.
[26]	OSTENDORF A,KULIK C,BAUER T,et al.Ablation of metals and semiconductors with ultrashort pulsed lasers:improving surface qualities of microcuts and grooves[J].Proceedings of SPIE,2004,5340:153 163.
[27]	KLOTZBACH U,MAELZER S,KUNTZE T,et al.Influence of gas on cutting silicon with solid state laser[J].Proceedings of SPIE,2004,5339:488-493.
[28]	DAMINELLI G,KRUGER J,KAUTEK W.Femtosecond laser interaction with silicon under water confinement[J]. Thin Solid Films,2004,467 (1/2):334 341.
[29]	JANG D,KIM D.Liquid-assisted excimer laser micromaehing for ablation enhancement and debris reduction[J].Journal of Laser Micro/Nanoengineering,2006,1(3):221-225.
[30]	ZHU S,LU Y F,HONG M H.Laser ablation of solid substrates in a water-confined environment[J].Applied Physics Letters,2001,79(9):1396-1398.

Newly developed techniques for laser dicing wafer

Abstract

References

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通讯作者: 陈斌, bchen63@163.com

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