Influence of laser energy on average size of Si nanoparticles deposited in thin film

CHEN Jun-ling; DUAN Guo-ping; HUANG Ming-ju

A series of nano-crystalline silicon films were deposited maintaining the same distance between the target and substrate by means of a pulse laser deposition system.The crystalline volume fraction of films and the average grain size were calculated based on Raman scattering and X-ray diffraction spectra.The results show that with the increase of the pulse energy,the average grain size becomes larger at first,and then goes smaller.The largest average grain size is 8.58nm when the pulse laser energy is 300mJ.The results have positive significance to the preparation of nano-crystalline silicon thin film.

Corresponding author: CHEN Jun-ling, hmingju@163.com;

1. Open Laboratory of Key Subject of Photoelectric Information Material and Devices of Henan Province, School of Physics and Electron, Henan University, Kaifeng 475001, China

Received Date: 2011-07-27

Accepted Date: 2011-09-05

Available Online: 2012-05-25

Abstract: A series of nano-crystalline silicon films were deposited maintaining the same distance between the target and substrate by means of a pulse laser deposition system.The crystalline volume fraction of films and the average grain size were calculated based on Raman scattering and X-ray diffraction spectra.The results show that with the increase of the pulse energy,the average grain size becomes larger at first,and then goes smaller.The largest average grain size is 8.58nm when the pulse laser energy is 300mJ.The results have positive significance to the preparation of nano-crystalline silicon thin film.

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Reference (19)

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Influence of laser energy on average size of Si nanoparticles deposited in thin film

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通讯作者: 陈斌, bchen63@163.com

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