Ultra-fast diagnosis of monocrystalline silicon ablated by ns and fs laser

TIAN Runni; WANG Junbo; QIU Rong; ZHOU Qiang; JIANG Yong; YANG Yongjia

doi:10.7510/jgjs.issn.1001-3806.2015.06.007

In order to study ultrafast dynamics of high power laser ablation of silica, the dynamic process of monocrystalline silicon ablated by nanosecond (ns) and femtosecond (fs) laser was investigated by the technology of ultrafast time-resolved optical diagnosis. The time-resolved shadowgraphs of the formation and evolution process of plasma expansion, material ejection and shock waves were obtained. For ns laser, material ejection occurs at 200ns ~300ns of delay time with gas-liquid mixture and at 1060ns of delay time with droplet ejection. For fs laser, material ejection occurs at 1ns~2ns of delay time with plasma. The result shows that the dynamic process of laser ablation is significantly different between by fs laser and by ns laser, especially the time of material ejection and the state and size of ejection particles. The results indicate that the process of material ejection induced by ns and fs laser is discontinuous and show that the material ejection is caused by different ablation mechanisms in different time. The results are helpful for the study of interaction mechanism of laser and silica, as well as laser etching monocrystalline silicon.

Ultra-fast diagnosis of monocrystalline silicon ablated by ns and fs laser

Corresponding author: QIU Rong, qiurong@swust.edu.cn;

1. Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621010, China

Received Date: 2014-09-09

Accepted Date: 2014-11-03

Available Online: 2015-11-25

Abstract: In order to study ultrafast dynamics of high power laser ablation of silica, the dynamic process of monocrystalline silicon ablated by nanosecond (ns) and femtosecond (fs) laser was investigated by the technology of ultrafast time-resolved optical diagnosis. The time-resolved shadowgraphs of the formation and evolution process of plasma expansion, material ejection and shock waves were obtained. For ns laser, material ejection occurs at 200ns ~300ns of delay time with gas-liquid mixture and at 1060ns of delay time with droplet ejection. For fs laser, material ejection occurs at 1ns~2ns of delay time with plasma. The result shows that the dynamic process of laser ablation is significantly different between by fs laser and by ns laser, especially the time of material ejection and the state and size of ejection particles. The results indicate that the process of material ejection induced by ns and fs laser is discontinuous and show that the material ejection is caused by different ablation mechanisms in different time. The results are helpful for the study of interaction mechanism of laser and silica, as well as laser etching monocrystalline silicon.

HTML

Reference (20)

[1]	XIA B, JIANG L, WANG S M, et al. Femtosecond laser drilling of micro-holes. Chinese Journal of Lasers, 2013, 40(2): 0201001(in Chinese).
[2]	BAI L, ZHAO X L, LIU Y, et al. Optical fiber micro-hole sensor fabricated with femtosecond laser. Laser Technology, 2013, 37(1):101-104(in Chinese).
[3]	YUAN Ch H, LI X H, TANG D Ch, et al. Influence of wavelength and atmosphere on laser induced microstructure of silicon surface. Laser Technology, 2010, 34(5):647-649(in Chinese).
[4]	YE X, ZHOU M, YU Z, et al. Periodical micro-structure and parameter optimization of pyrolytic carbon surface induced by nanosecond laser.Laser Technology,2013,37(4): 537-540(in Chinese).
[5]	KANG X M, YU L, YANG G F, et al. Experimental research of increase-friction characteristics of no-match friction-pair surface based on laser micro-modelling. Laser Technology, 2013, 37(4): 449-454(in Chinese).
[6]	CHEN Zh D, WU Q, YANG M, et al. Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases. Laser and Particle Beams, 2013, 31(3):539-545.
[7]	CHEN Zh D, WU Q, YANG M, et al. Time-resolved photoluminescence of silicon microstructures fabricated by femtosecond laser in air.Optics Express, 2013,21(18):21329-21336.
[8]	LORAZO P, LEWIS L J, MEUNIER M. Short-pulse laser ablation of solids: from phase explosion to fragmentation. Physical Review Letters, 2003, 91(22): 225502.
[9]	ROETERDINK W G, JUURLING L B F, VAUGHAN O P H, et al. Coulomb explosion in femtosecond laser ablation of Si (111). Applied Physics Letters, 2003, 82(23): 4190-4192.
[10]	WANG X, XU X. Thermoplastic wave in metal induced by ultrafast laser pulses. Journal of Thermal Stresses, 2002, 25(5):457-473.
[11]	PEREZ D, LEWIS L J. Ablation of solids under femtosecond laser pulses. Physical Review Letters, 2002, 89(25):255504.
[12]	PEREZ D, LEWIS L J. Molecular-dynamics study of ablation of solids under femtosecond laser pulses. Physical Review, 2003, B67(18):184102.
[13]	MARTYNYUK M M. Vaporization and boiling of liquid metal in an exploding wire. Soviet Physics Technical Physics, 1974, 19(6): 793-797.
[14]	CHEN J K, BERAUN J E. Modelling of ultrashort laser ablation of gold films in vacuum . Journal of Optics, 2003,A5(3): 168-173.
[15]	YOO J H, JEONG S H, MAO X L, et al. Evidence for phase-explosion and generation of large particles during high power nanosecond laser ablation of silicon . Applied Physics Letters, 2000, 76(6): 783-785.
[16]	ZHANG N, ZHU X, YANG J, et al. Time-resolved shadowgraphs of material ejection in intense femtosecond laser ablation of aluminum . Physical Review Letters, 2007, 99(16): 167602.
[17]	ZHOU Y, WU B, TAO S, et al. Physical mechanism of silicon ablation with long nanosecond laser pulses at 1064nm through time-resolved observation. Applied Surface Science, 2011, 257(7): 2886-2890.
[18]	SALL B, GOBERT O, MEYBADIER P, et al. Femtosecond and picosecond laser microablation: ablation efficiency and laser microplasma expansion. Applied Physics, 1999, A69(1): S381-S383.
[19]	WANG K P, ZHANG Q H. The ablation microstructures of mono crystalline silicon by high power nanosecond laser.Laser Journal, 2012, 33(5): 36-37(in Chinese).
[20]	ADEN M, KREUTZ E W, SCHLVTER H, et al . The applicability of the Sedov-Taylor scaling during material removal of metals and oxide layers with pulsed and excimer laser radiation . Journal of Physics, 1997, D30(6): 980-989.

Ultra-fast diagnosis of monocrystalline silicon ablated by ns and fs laser

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views