Research of PMMA etched by KrF excimer laser
-
1.
Department of Physics, Heze University, Heze 274015, China;
-
2.
College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China
-
Received Date:
2010-12-13
Accepted Date:
2010-12-30
-
Abstract
In order to research the internal mechanism of interaction between excimer laser and polymethylmethacrylate(PMMA ), the surface of PMMA was vertically irradiated by KrF excimer laser at wavelength of 248nm, and the experiment was completed in atmosphere through changing laser energy and pulse number. The treated PMMA was analyzed with many methods, for example scanning electron microscope(SEM), X-ray photoelectron spectroscopy(XPS), etc. The results of SEM indicate that a lot of apertures can appear at the irradiated surface of PMMA. The phenomenon means that some gas is given out when excimer laser irradiates PMMA. The results of XPS show that peak intensity of C1s decreases but peak intensity of O1s increases, so the methyls of PMMA are etched and O2 in atmosphere attends the reaction. Besides, the research on the etching rate and the roughness indicates they do not always increase when laser energy and pulse number increase.
-
-
References
|
[1]
|
CHU X M,GU P L,YANG J X.Study on technical parameters of laser welding HDPE plastics[J].Laser Technology,2010，34(1):116-119(in Chinese). |
|
[2]
|
XU R Q,CUI Y P,ZHAO R,et al．A ttenuation of laser generated shock waves in Plexiglas[J].Laser Technology,2008,32(3):225-227,243(in Chinese). |
|
[3]
|
CHEN J,ZHANG Q L,YAO J H,et al．Influence of surface roughness on la ser absorptiv ity[J].Laser Technology,2008,32(6):624-627(in Chinese). |
|
[4]
|
LI Y L,WANG W P.Laser interaction with polymers and its applications[J].Electro-optic Technology Application,2010,25(2):8-13(in Chinese). |
|
[5]
|
ZHANG L,LOU Q H,WEI Y R,et al.Comparison of etching characteristics of polymers by 193nm and 308nm excimer laser radiation[J].Chinese Journal of Lasers,2002,29(1):25-28(in Chinese). |
|
[6]
|
LIU A H,ZHANG Y H,MAN B Y.Surface modification and ablation of polytetrafluorethylene by excimer laser irradiation [J].Acta Optica Sinica,2006,26(7):1073-1077(in Chinese). |
|
[7]
|
ZHU X L,LIU Sh B,CHENG T,et al.Analysis of X-ray photoelectron spectroscopy of polymethyl methacrylate etched by a KrF excimer laser[J].Chinese Physics Letters,2005,22(6):1526-1529. |
|
[8]
|
WEI R X,JIANG D Sh,ZHOU Z D.Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching[J].Optics and Precision Engineering,2004,12(2):231-234(in Chinese). |
|
[9]
|
WANG J Q,WU W H,FENG D M.Introduction to electron spectroscopy (XPS/XAES/UPS)[M].Beijing:National Defense Industry Press,1992:190-191(in Chinese). |
|
[10]
|
ZHAO Zh Y,HOU D Sh,DONG X Ch,et al．Research on etching properties of polycarbonate by KrF excimer laser[J].Opto-Electronic Engineering,2004,31(2):4-7(in Chinese). |
|
[11]
|
WOCHNOWSKI C,METEV S,SEPOLD G.UV-laser-assisted modification of the optical properties of polymethylmethacrylate[J].Applied Surface Science,2000,154/155(1):706-711. |
-
-
Proportional views
-
Map
DownLoad: