LD pumped passively Q-switched Nd:YAG/GdVO4 intracavity Raman laser

SU Fu-fang; WU Fu-quan; HAO Dian-zhong; HAN Pei-gao; SHI Meng

doi:10.3969/j.issn.1001-3806.2011.03.029

In order to study of output characteristics of a laser diode pumped passively Q-switched Nd:YAG/GdVO4 intracavity Raman laser, taking Nd:YAG as the gain crystal, GdVO4 as the Raman medium, and two Cr4+:YAG crystals with different initial transmissions as the saturable absorber respectively, the passively Q-switched operation of the Nd:YAG/GdVO4 Raman laser at 1174nm was investigated and compared. The average power, pulse energy, pulse width and pulse repletion rate of diode pumped passively Q-switched Nd:GdVO4 self-Raman laser at 1174nm with respect to the injected pump power were measured. The obtained maximum output average power was 150.6mW with respect to injected power of 5.2W and the corresponding conversion efficiency was 2.9% in the case of the initial transmission of 91%. The theoretical results were obtained according to the rate equations, in which the Gaussian distribution of the intracavity photon density of the fundamental and Raman laser and the initial population inversion density were taken into account. The obtained theoretical results were in agreement with the experimental results on the whole.

LD pumped passively Q-switched Nd:YAG/GdVO4 intracavity Raman laser

1. Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Institute of Laser Research, Qufu Normal University, Qufu 273165, China

Received Date: 2010-06-29

Accepted Date: 2010-07-30

Available Online: 2011-05-25

Abstract: In order to study of output characteristics of a laser diode pumped passively Q-switched Nd:YAG/GdVO4 intracavity Raman laser, taking Nd:YAG as the gain crystal, GdVO4 as the Raman medium, and two Cr4+:YAG crystals with different initial transmissions as the saturable absorber respectively, the passively Q-switched operation of the Nd:YAG/GdVO4 Raman laser at 1174nm was investigated and compared. The average power, pulse energy, pulse width and pulse repletion rate of diode pumped passively Q-switched Nd:GdVO4 self-Raman laser at 1174nm with respect to the injected pump power were measured. The obtained maximum output average power was 150.6mW with respect to injected power of 5.2W and the corresponding conversion efficiency was 2.9% in the case of the initial transmission of 91%. The theoretical results were obtained according to the rate equations, in which the Gaussian distribution of the intracavity photon density of the fundamental and Raman laser and the initial population inversion density were taken into account. The obtained theoretical results were in agreement with the experimental results on the whole.

HTML

Reference (18)

[1]	POWELL J T,POWELL R C,PEYGHAMBARIAN N,et al.Generation of 1.5μm radiation through intracavity solid-state Raman shifting in Ba(NO3)2 nonlinear crystals[J].Optics Letters,1995,20(9):1017-1019.
[2]	MAJOR A,AITCHISON J S,SMITH P W E.Efficient Raman shifting of high-energy picosecond pulses into the eye-safe 1.5μm spectral region by use of a KGd(WO4)2 crystal[J].Optics Letters,2005,30(4):421-423.
[3]	JELINKOVA H,SULC J,BASIEV T T,et al.Stimulated Raman scattering in Nd:SrWO4[J].Laser Physics Letters,2005,2(1):4-11.
[4]	SU F F，ZHANG X Y,WANG Q P,et al.Output properties of external resonator SrWO4 Raman laser[J].Acta Optica Sinica，2006，26(5):693-696(in Chinese).
[5]	SU F F，ZHANG X Y,WANG Q P,et al.Passively Q-switched Nd:GdVO4 self-Raman laser[J].Acta Optica Sinica，2007,27(10):1831-1835(in Chinese).
[6]	LIU B,ZHANG X Y,WANG Q P,et al.Diode-pumped intracavity frequency-doubled Nd:YVO4 self-Raman yellow laser[J].Acta Photonica Sinica 2007，36(10)：1777-1780(in Chinese).
[7]	JIA P,ZHANG X Y,WANG Q P,et al.Laser diode-pumped Nd:YVO4 self-stimulated Raman laser[J].Chinese Journal of Lasers,2006,33(2):1309-1313(in Chinese).
[8]	LIU T H,TAN H M,WANG B Sh,et al.Laser diode-pumped Nd:GdVO4 microchip laser[J].Chinese Journal of Lasers,2006,33(12):1593-1596(in Chinese).
[9]	KAMINSKII A A,UEDA K,EICHLER H J.T etragonal vanadates YVO4 and GdVO4-new efficient χ(3)-materials for Raman lasers[J].Optics Communications,2001,194(1/3):201-206.
[10]	HU D W,YU H H,WANG Zh P,et al.Efficient stimulated Raman scattering of YVO4 crystal[J].Acta Optica Sinica,2006,26(6):918-920(in Chinese).
[11]	CHEN Y F.Compact efficient self-frequency Raman conversion in diode-pumped passively Q-switched Nd:GdVO4 laser[J].Applied Physics,2004,B78(6):685-687.
[12]	CHEN Y F.Efficient 1521nm Nd:GdVO4 Raman laser[J].Optics Letters,2004,29(22):2632-2634.
[13]	BASIEV T T,VASSILIEV S V,KONJUSHKIN V A.Diode pumped 500-picosecond Nd:GdVO4 Raman laser[J].Laser Physics Letters,2004,1(5):237-240.
[14]	DEMIDOVICH A A,APANASEVICH P A,BATAY L E.Sub-nanosecond microchip laser with intracavity Raman conversion[J].Applied Physics,2003,76(5):509-514.
[15]	CHEN W B,INAGAWA Y J,OMATSU T.Diode-pumped,self-stimulating,passively Q-switched Nd:PbWO4 Raman laser[J].Optics Communications,2001,194(4/6):401-407.
[16]	LOIKO Y V,DEMIDOVICH A A,VOITOVICH A P.Stokes pulse energy of Q-switched lasers with intracavity Raman conversion[J].Journal of the Optical Society of America,2005,B22(11):2450-2458.
[17]	DEMIDOVICH A A,VOITIKOV S V,BATAY L E.Modeling and experimental investigation of short pulse Raman microchip laser[J].Optics Communications,2006,263(1):52-59.
[18]	ZHANG X Y,ZHAO S Z,WANG Q P.Modeling of passively Q-switched lasers[J].Journal of the Optical Society of America,2000,B17(7):1166-1175.

LD pumped passively Q-switched Nd:YAG/GdVO4 intracavity Raman laser

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views