Study on chaos characteristics in mutually coupled semiconductor lasers

FENG Ya-qiang; LIANG Li-ping; YUAN Shu-qing

doi:10.3969/j.issn.1001-3806.2011.02.015

In order to study the chaos complexity degree and bandwidth of mutually coupled semiconductor lasers, numerical analysis was carried out based on their rate equations.The results indicate that the chaotic bandwidth enhances with the increase of injection coefficient,and chaos turns more complicated.The higher the current biases,the larger chaotic bandwidth turns and the more complex the chaos wave is.These results provide theoretic guidance to realize broad bandwidth complex chaos.

Study on chaos characteristics in mutually coupled semiconductor lasers

1. Department of Mathematics, College of Science, Taiyuan University of Technology, Taiyuan 030024, China;

2. Department of Physics, College of Science, Taiyuan University of Technology, Taiyuan 030024, China

Received Date: 2010-05-13

Accepted Date: 2010-08-21

Available Online: 2011-03-25

Abstract: In order to study the chaos complexity degree and bandwidth of mutually coupled semiconductor lasers, numerical analysis was carried out based on their rate equations.The results indicate that the chaotic bandwidth enhances with the increase of injection coefficient,and chaos turns more complicated.The higher the current biases,the larger chaotic bandwidth turns and the more complex the chaos wave is.These results provide theoretic guidance to realize broad bandwidth complex chaos.

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Reference (14)

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Study on chaos characteristics in mutually coupled semiconductor lasers

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