[1] ZHU W J,GUO X,LIAN P et al.Characteristics comparison of a novel vertical-cavity surface-emitting laser[J].Laser Technology,2003,27(4):325～327(in Chinese).
[2] PASCHOTTA R,HARING R,GARNACHE A et al.Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers[J].Appl Phys,2002,B75(4):445～451.
[3] ASCHWANDEN A,LORENSER D,UNOLD H J et al.2.1W picosecond passively mode-locked external-cavity semiconductor laser[J].Opt Lett,2005,30(3):272～274.
[4] CASEL O,WOLL D,TREMONT M A et al.Blue 489nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser[J].Appl Phys,2005,B81(4):443～446.
[5] GARNACHE A,HOOGLAND S,TROPPER A C.Sub-500fs solitonlike pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power[J].A P L,2002,80(21):3892～3894.
[6] LORENSER D,UNOLD H J,MAAS D J H C et al.Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers[J].Appl Phys,2004,B79(8):927～932.
[7] TROPPER A C,FOREMAN H D,GARNACHE A et al.Vertical-external-cavity semiconductor lasers[J].J Phys,2004,D37(9):R75～R85.
[8] CAO S S.Review of high power semiconductor lasers[J].Laser Technology,2000,24(4):203～206(in Chinese).
[9] KUZNETSOV M,HAKIMI F,SPRAGUE R et al.Design and characteristics of high-power (0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams[J].IEEE Journal of Selected Topics in Quantum Electronics,1999,5(3):561～573.
[10] CHILLA J,BUTTERWORTH S,ZEITSCHEL A et al.High power optically pumped semiconductor lasers[J].Proc SPIE,2004,5332:143～150.
[11] H(a)RING R,PASCHOTTA R,ASCHWANDEN A et al.High-power passively mode-locked semiconductor lasers[J].IEEE J Q E,2002,38(9):1268～1275.
[12] HOOGLAND S,DHANJAL S,TROPPER A C et al.Passively mode-locked diode-pumped surface-emitting semiconductor laser[J].IEEE Photonics Technology Letters,2000,12(9):1135～1137.
[13] LUTGEN S,ALBRECHT T,BRICK P et al.8W high efficiency continuous-wave semiconductor disk laser at 1000nm[J].A P L,2003,82(21):3620～3622.
[14] ALFORD W J,RAYMOND T D,CRAWFORD M H et al.High power (>1W) good beam quality surface-emitting semiconductor laser[J].J O S A,2002,B19(4):663～666.
[15] HOOGLAND S,GARMACHE A,SAGNES I et al.Picosecond pulse generation with 1.5μm passively modelocked surface-emitting semiconductor laser[J].Electron Lett,2003,39(11):846～847.
[16] ARAHIRA Sh,MATSUI Y,OGAWA Y.Mode-locking at very high repetition rates more than terahertz in passively mode-locked distributed-Bragg-reflector laser diodes[J].IEEE J Q E,1996,32(7):1211～1224.