[1] CHEN S H,DAI Y T,XIAO X, et al. Investigation on laser polishing of GaN film using deep ultraviolet laser[J]. Laser Technology, 2012, 36(1):13-16(in Chinese).
[2] LIU X X, HUANG R, YAO G, et al. Numerical simulation of the temperature field of laser butt welding of titanium alloy sheet[J]. Laser Technology, 2013, 37(5):700-703(in Chinese).
[3] SHAO H M, ZHANG S L, XIE S, et al. Research of AlGaN/GaN PIN solar-blind ultraviolet photodetector with back-illumination[J]. Journal of OptoelectronicsLaser, 2011, 22(7):984-986(in Chinese).
[4] JIANG L. The simulation research of theory model of multi-pizoelectric effect on piezoelectric material[D]. Dalian:Dalian University of Technology,2007:16-22(in Chinese).
[5] BAI W. Effect of different templates on structure evolution and large strain response under a low electric field in -textured lead-free BNT-based piezoelectric ceramics[J]. Journal of the European Ceramic Society, 2015, 35(9):2489-2499.
[6] TAO H F,YANG Z X,SONG Y G, et al. The research of laser treatment of GaN thin film[J]. Laser Technology, 2005, 29(6):652-656(in Chinese).
[7] KUROKAWA F, MORI A, TSUJIURA Y, et al. Compositional dependence of Ba(Zr0.2Ti0.8)O3-(Ba0.7Ca0.3)TiO3 piezoelectric thin films prepared by combinatorial sputtering[J]. Thin Solid Films, 2015, 588:34-38.
[8] LIN L.ANSYS finite element analysis of piezoelectric ceramic materials based on ANSYS[J]. Sience Technology Information,2009, 36:39-40(in Chinese).
[9] LOU L F, YANG Y T, ZHANG J Q, et al. Application of ansys to the piezoelectric analysis of PZT piezoelectric thin film microsensor[J].Mechanical Science and Technology, 2005, 24(7):875-878(in Chinese).
[10] SUO X D. Simulation and deformation analysis of CMUT diaphragm[D]. Guangzhou:South China University of Technology, 2013:19-37(in Chinese).
[11] ZHANG J. On the piezoelectric potential of gallium nitride nanotubes[J].Nano Energy, 2015, 12:322-330.
[12] KANG B S, KIM S, REN F, et al. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes[J]. Applied Physics Letters,2004,85(14):2962-2964.
[13] KANG B S, KIM J, JANG S, et al. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane[J]. Applied Physics Letters,2005,86(25):253502.
[14] EICKHOFF M, AMBACHER O. Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterstructures[J]. Journal of Applied Physics,2001, 90(7):3383-3386.
[15] MULLER A.GaN membrane metal-semiconductor-metal ultraviolet photodetector.Applied Optics, 2008, 47(10):1453-1459.
[16] MIAO J, ZHU R G. The finite element of twin piezoelectric micro cantilever based on ansys[J]. Piezoelectrics Acoustooptics, 2011, 33(4):557-565(in Chinese).
[17] LI L,SHEN G D,ZOU D S, et al. Principle and design of an ir detectors for a novel room temperature MEMS[J]. Opto-Electronic Engineering,2004,31(2):34-43(in Chinese).
[18] LI L J. Design and fabrication of micromechanical membrane[J]. Microfabrication Technology Journal of Electron Devices, 1999, 22(3):177-181(in Chinese).