| [1] | YE S, WANG Z, TANG L, et al. Electro-absorption optical modulator using dual-graphene-on-graphene configuration[J]. Optics Express, 2014, 22(21): 26173-26180. doi: 10.1364/OE.22.026173 |
| [2] | ZHAO Z, LI G, YU F, et al. Sub-wavelength grating enhanced ultra-narrow graphene perfect absorber[J]. Plasmonics, 2018, 13(6): 2267-2272. doi: 10.1007/s11468-018-0748-9 |
| [3] | JIANG X W, WU H, YUAN Sh C. Enhancement of graphene three-channel optical absorption based on metal grating[J] Acta Physica Sinica, 2019, 68(13): 138101(in Chinese). doi: 10.7498/aps.68.20182173 |
| [4] | MIN J H, SON M, BAE S Y, et al. Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes[J]. Optics Express, 2014, 22(s4): A1040-A1050. doi: 10.1364/OE.22.0A1040 |
| [5] | SEO T H, OH T S, CHAE S J, et al. Enhanced light output power of GaN light-emitting diodes with graphene film as a transparent conducting electrode[J]. Japanese Journal of Applied Physics, 2011, 50(12): 125103. |
| [6] | KUN X, CHEN X, JUN D, et al. Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin o-xide contact layers for GaN light emitting diodes[J]. Applied Physics Le-tters, 2013, 102(16): 162102. doi: 10.1063/1.4802798 |
| [7] | XUE Sh J, FANG L, LONG X M, et al. Influence of ITO, graphene thickness and electrodes buried depth on LED, thermal-electrical characteristics using numerical simulation[J]. Chinese Physical Le-tters, 2014, 2(31): 137-140. |
| [8] | SHIM J P, SEONG W S, MIN J H, et al. Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer[J]. Nanotechnology, 2016, 27(46): 465202. doi: 10.1088/0957-4484/27/46/465202 |
| [9] | QIAN M C, ZHANG SH F, LUO H J, et al. Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes[J]. Chinese Physics, 2017, B26(10): 287-292. |
| [10] | LI L, YIYU O, XIAOLONG Z, et al. InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer[J]. Optical Materials Express, 2018, 8(7): 1818-1826. doi: 10.1364/OME.8.001818 |
| [11] | NARUKAWA Y, NIKI I, IZUNO K, et al. Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip[J]. Japanese Journal of Applied Physics, 2002, 41(2): L371-L373. |
| [12] | DASGUPTA P K, LI Q, TEMKIN H, et al. Applications of deep UV LEDs to chemical and biological sensing[J]. Proceedings of the SPIE, 2004, 5530: 25-32. |
| [13] | YANG H, CAO Y, HE J H, et al. Research progress in graphene-based infrared photodetectors[J]. Laser & Optoelectronics Progress, 2015, 52(11): 110003(in Chinese). |
| [14] | LI W. Study of improving light emitting efficiency of GaN based LED by surface micro structures[D].Ji'nan: Shandong University, 2014: 35-37(in Chinese). |
| [15] | SEO T H, LEE K J, PARK A H, et al. Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode[J]. Optics Express, 2011, 19(23): 23111. doi: 10.1364/OE.19.023111 |
| [16] | GOLDHAHN R, SCHEINER J, SHOKHOVETS S, et al. Refractive index and gap energy of cubic InxGa1-xN[J]. Applied Physics Le-tters, 2000, 76(3): 291-293. doi: 10.1063/1.125725 |
| [17] | ROBERT J M, JACOB P H. Subnanometer-accuracy optical distance ruler based on fluorescence quenching by transparent conductors[J]. Optica, 2016, 3(2): 112-117. doi: 10.1364/OPTICA.3.000112 |
| [18] | LI W, YUE Q Y, Kong F M, et al. Influence of surface ZnO nano-structures on the light emitting efficiency of GaN-based LED[J]. Acta Photonica Sinica, 2013, 42(4): 409-425(in Chinese). doi: 10.3788/gzxb20134204.0409 |
| [19] | LIU H. Study on enhancing the light extraction efficiency of GaN-based light emitting diodes by photonic crystal and one dimensional grating structure[D].Wuhan: Huazhong University of Science and Technology, 2014: 25-61(in Chinese). |
| [20] | MATIOLI E, RANGEL E, IZA M, et al. High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals[J]. Applied Physics Letters, 2010, 96(3): 031108. doi: 10.1063/1.3293442 |
| [21] | WANG X M, LI K, KONG F M, et al. Effect of structure of nano hemisphere microlens array on light extraction efficiency of GaN LED[J]. Acta Optica Sincia, 2012, 32(12): 1223001(in Chinese). doi: 10.3788/AOS201232.1223001 |