[1] 谢修敏, 徐强, 陈剑, 等. 锑化物Ⅱ类超晶格中远红外探测器的研究进展[J]. 激光技术, 2020, 44(6): 688-694.XIE X M, XU Q, CHEN J, et al. Research progress on antimonide based type-Ⅱ superlattice mid- and long-infrared detectors[J]. Laser Technology, 2020, 44(6): 688-694(in Chinese).
[2] ERHARD N, ZENGER S, MORKTTER S, et al. Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires[J]. Nano Letters, 2015, 15(10): 6869-6874. doi: 10.1021/acs.nanolett.5b02766
[3] 孙浩, 徐建明, 张宏超, 等. 连续激光辐照三结GaAs太阳电池温度场仿真[J]. 激光技术, 2018, 42(2): 239-244.SUN H, XU J M, ZHANG H Ch, et al. Simulation of three-junction GaAs solar cell temperature field by continuous wave laser irradiation[J]. Laser Technology, 2018, 42(2): 239-244(in Chinese).
[4] QI H, WANG Q, ZHANG X, et al. Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation[J]. Optics and Lasers in Engineering, 2011, 49(2): 285-291. doi: 10.1016/j.optlaseng.2010.10.004
[5] SRIVASTAVA P K, SINGH A P, KAPOOR A. Theoretical analysis of pit formation in GaAs surfaces in picosecond and femtosecond laser ablation regimes[J]. Optics & Laser Technology, 2006, 38(8): 649-653.
[6] SINGH A P, KAPOOR A, TRIPATHI K N, et al. Effect of polarization on the surface damage morphology of GaAs single crystal during irradiation with picosecond laser pulses[J]. Optics & Laser Techno-logy, 2002, 34(1): 23-26.
[7] PRATAP S A, KAPOOR A, TRIPATHI K N, et al. Thermal and mechanical damage of GaAs in picosecond regime[J]. Optics & Laser Technology, 2001, 33(6): 363-369.
[8] KUANR A V, BANSAL S K, SRIVASTAVA G P. Laser induced damage in GaAs at 1.06 μm wavelength: Surface effects[J]. Optics & Laser Technology, 1996, 28(1): 25-34.
[9] GARG A, KAPOOR A, TRIPATHI K N. Laser-induced damage studies in GaAs[J]. Optics & Laser Technology, 2003, 35(1): 21-24.
[10] SARDAR D K, BECKER M F, WALSER R M. Multipulse laser damage of GaAs surfaces[J]. Journal of Applied Physics, 1987, 62(9): 3688-3693. doi: 10.1063/1.339250
[11] SOLIS J, AFONSO C N, PIQUERAS J. Excimer laser melting of GaAs: Real-time optical study[J]. Journal of Applied Physics, 1992, 71(2): 1032-1034. doi: 10.1063/1.350391
[12] WAUTELET M, van VECHTEN J A. Carrier diffusion in semiconductors subject to large gradients of excited carrier density[J]. Physical Review B, 1981, 23(10): 5551-5554. doi: 10.1103/PhysRevB.23.5551
[13] HUANG A L, BECKER M F, WALSER R M. Laser-induced damage and ion emission of GaAs at 1.064 m[J]. Applied Optics, 1986, 25(21): 3864-3870. doi: 10.1364/AO.25.003864
[14] QI H, WANG Q, ZHANG X, et al. Investigation on damage process of GaAs induced by 1064 nm continuous laser[J]. Journal of Applied Physics, 2008, 103(3): 033106. doi: 10.1063/1.2841717
[15] LI Z W, ZHANG H C, SHEN Z H, et al. Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon[J]. Journal of Applied Physics, 2013, 114(3): 033104. doi: 10.1063/1.4815872
[16] CHOI S, JHANG K Y. In situ detection of laser-induced slip initiation on the silicon wafer surface[J]. Optics Letters, 2014, 39(14): 4278-4281. doi: 10.1364/OL.39.004278
[17] 吕雪明, 李泽文, 张检民, 等. 不同延时的组合脉冲激光致硅表面损伤研究[J]. 激光技术, 2020, 44(6): 695-699.LÜ X M, LI Z W, ZHANG J M, et al. Surface damage study of silicon induced by combined millisecond and nanosecond laser with different delays[J]. Laser Technology, 2020, 44(6): 695-699(in Chinese).
[18] GARCIA B, MARTINEZ J, PIQUERAS J. Laser melting of GaAs covered with thin metal layers[J]. Applied Physics, 1990, A51(5): 437-45.
[19] THIRD C E, WEINBERG F, YOUNG L. Mathematical model of internal temperature profile of GaAs during rapid thermal annealing[J]. Journal of Applied Physics, 1991, 69(12): 8037-8041. doi: 10.1063/1.347449
[20] JIA Zh Ch, ZHANG T Zh, ZHU H Zh, et al. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 70-74.