[1] van VECHTEN J A, TSU R, SARIS F W. Nonthermal pulsed laser annealing of Si plasma annealing[J]. Physics Letters, 1979, A74(6):422-426.
[2] SHANK C V, YEN R, HIRLIMANN C. Time-resolved reflectivity measurements of femtosecond optical pulse induced phase transitions in silicon[J]. Physical Review Letters, 1983, 50(2):454-457.
[3] SAETA P, WANG J, SIEGAL Y, et al. Ultrafast electronic disordering during femtosecond laser melting of GaAs[J]. Physical Review Letters, 1991, 67(8):1023-1026. doi: 10.1103/PhysRevLett.67.1023
[4] LARSSON J, HEIMANN P A, LINDENBERG A M, et al. Ultrafast structural changes measured by time-resolved X-ray diffraction[J]. Applied Physics, 1998, A66(6):587-591.
[5] UTEZA O P, GAMALY E G, RODE A V, et al. Gallium transformation under femtosecond laser excitation:phase coexistence and incomplete melting[J]. Physical Review, 2004, B70(5):054108.
[6] SILVESTRELLI P L, ALAVI A, PARRINELLO M, et al. Structural, dynamical, electronic, and bonding properties of laser-heated silicon:an ab initio molecular-dynamics study[J]. Physical Review, 1997, B56(8):3806-3812.
[7] SILVESTRELLI P L, ALAVI A, PARRINELLO M, et al. Ab initio molecular dynamics simulation of laser melting of silicon[J]. Physical Review Letters, 1996, 77(15):3149-3152. doi: 10.1103/PhysRevLett.77.3149
[8] WANG M M, GAO T, YU Y, et al. Effect of intense laser irradiation on the lattice stability of InSb[J]. The European Physical Journal Applied Physics, 2012, 57(1):10104. doi: 10.1051/epjap/2011110381
[9] DENG F M, GAO T, SHEN Y H, et al. Effect of intense laser irradiation on the structural stability of 3C-SiC[J]. Acta Physica Sinica, 2015, 64(4):046301(in Chinese).
[10] RECOULES V, CLÉROUIN J, ZÉRAH G, et al. Effect of intense laser irradiation on the lattice stability of semiconductors and metals[J]. Physical Review Letters, 2006, 96(5):055503. doi: 10.1103/PhysRevLett.96.055503
[11] ZIJLSTRA E S, WALKENHORST J, GILFERT C, et al. Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb[J]. Applied Physics, 2008, B93(4):743-747.
[12] SHEN Y H, GAO T, WANG M M. Effect of intense laser irradiation on the lattice stability of Cu and Ag[J]. Computational Materials Science, 2013, 77(3):372-376.
[13] SHEN Y H, GAO T, WANG M M. Effect of intense laser irradiation on the lattice stability of Al2Au[J]. Communication in Theoretical Physics, 2013, 59(5):589-593. doi: 10.1088/0253-6102/59/5/13
[14] MATSUNAMI H. Current SiC technology for power electronic devices beyond Si[J].Microelectronic Engineering, 2006, 83(1):2-4. doi: 10.1016/j.mee.2005.10.012
[15] WEITSEL C E. Silicon carbicle high frequency devices[J]. Materials Science Forum, 1998, 264/268:907-912. doi: 10.4028/www.scientific.net/MSF.264-268
[16] COSTA A K, CAMARGO J R S S. Amorphous SiC coatings for WC cutting tools[J]. Surface and Coatings Technology, 2003, 163/164(2):176-180.
[17] ROTTNER K, FRISCHHOLZ M, MYRTVEIT T, et al. SiC power devices for high voltage applications[J]. Materials Science & Engineering, 1999, 61/62(98):330-338.
[18] ZHANG H P, QI R S, WANG D J, et al. Device structure and simulations of 4H-SiC TPJBS diode[J].Power Electronics, 2011, 45(9):35-38(in Chinese).
[19] GAO D M, LU Q R, WEI Y B, et al. Minority carrier lifetime measurement for N-type 4H-SiC by means of the microwave photoconductivity decay method[J]. Laser Technology, 2011, 35(5):610-612(in Chinese).
[20] GAO D M, LU Q R, WEI Y B, et al.Study on minority carrier litetime of P type 4H-SiC[J]. China Measurement & Test, 2012, 38(1):19-21(in Chinese).
[21] JIANG Z Y, XU X H, WU H S, et al. Studies on the geometric and electronic structure of SiC polytypes[J]. Acta Physica Sinica, 2002, 51(7):1586-1590(in Chinese).
[22] TROULLIER N, MARTINS J L. A straightforward method for generating soft transferable pseudopotentials[J]. Solid State Communications, 1990, 74(7):613-616. doi: 10.1016/0038-1098(90)90686-6
[23] GONZE X, BEUKEN J M, CARACAS R, et al. First-principles computation of material properties:the ABINIT software project[J]. Computational Materials Science, 2002, 25(3):478-492. doi: 10.1016/S0927-0256(02)00325-7
[24] CAMP P E, DOREN V, DEVREESE J T. First principles calculation of the pressure coefficient of the indirect band gap and of the charge density of C and Si[J]. Physical Review, 1986, B34(9):1314-1316.
[25] FENG S Q, ZHAO J L, CHENG X L.A first principles study of the lattice stability of diamond-structure semiconductors under intense laser irradiation[J]. Applied Physics, 2013, J113(2):023301.
[26] THOMPSON M O, GALVIN G J, MAYER J W, et al. Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation[J]. Physical Review Letters, 1984, 52(26):2360-2363. doi: 10.1103/PhysRevLett.52.2360
[27] POATE J M, BROWN W L. Laser annealing of silicon[J]. Physics Today, 1982, 35(6):24-30. doi: 10.1063/1.2915125
[28] LIU Z L. Advantage and development foreground of SiC power semiconductor devices[J]. Power Electronics, 2009(6):10-13(in Chin-ese).
[29] GROMOV G G, KAPAEV V V, KOPAEV Y V. Semiconductor-metal phase transition induced in InSb by a strong electromagnetic field[J]. Zhurnal Eksperimental'noii Teoreticheskoi Fiziki, 1988, 94(12):101-113.
[30] SOKOLOWSKI-TINTEN K, BIALKOWSKI J, VON DER LINDE D. Ultrafast laser-induced order-disorder transitions in semiconductors[J]. Physical Review, 1995, B51(20):14186.
[31] DENG F M, GAO T. Effect of intense laser irradiation on the electronic properties of 3C-SiC[J]. Chemical Research and Application, 2016, 28(5):681-687(in Chinese).
[32] DENG F M. Effect of intense laser irradiation on the electronic properties of 2H-SiC[J]. Acta Physica Sinica, 2015, 64(22):227101(in Chinese).
[33] DENG F M. Effect of intense laser irradiation on the electronic properties of 6H-SiC[J]. Acta Physica Sinica, 2016, 65(10):107101(in Chinese).