| [1] | YU W, MENG L H, GENG Ch L, et al. Structural properties of hydrogenated amorphous silicon nitride films deposited by facing targets sputtering[J]. Chinese Science Bulletin, 2010, 55(18):1799-1804(in Chinese). |
| [2] | WANG Y, SHEN D Zh, ZHANG J Y, et al. Influence of thermal annealing on the structural and optical properties of Si-rich silicon nitride films[J]. Chinese Journal of Liquid Crystals and Displays, 2005, 20(1):18-21(in Chinese). |
| [3] | LIU F Zh, SCOTT W, LYNN G, et al. Amorphous silicon nitride deposited by hot-wire chemical vapor deposition[J]. Journal of Applied Physics, 2004, 96(5):2973-2979. |
| [4] | LIAO W G, ZENG X B, WEN G Zh, et al. Photoluminescences and structure performances of Si-rich silicon nitride thin films containing Si quantum dots[J]. Acta Physica Sinica, 2013, 62(12):126801-126805(in Chinese). |
| [5] | DUERINCKX F, SZLUFCIK J. Defect passivation of industrial multi-crystalline solar cells based on PECVD silicon nitride[J]. Solar Energy Mater Solar Cells, 2002, 72(1):231-246. |
| [6] | PALOURA E, NAUKA K, LAGOWSKI J. Silicon nitride films grown on silicon below 300℃ in low power nitrogen plasma[J]. Applied Physics Letters, 1986, 49(2):97-99. |
| [7] | LUO Z, LIN X Y, YU C Y, et al. Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films[J]. Acta Physica Sinica,2003,52(1):169-174(in Chinese). |
| [8] | LANFORD W A, RAND M J. The hydrogen content of plasma-deposited silicon nitride[J]. Journal of Applied Physics, 1978, 49(4):2473-2477. |
| [9] | MOLINARI M, RINNERT H, VERGNAT M. Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen[J]. Applied Physics Letters, 2001, 79(14):2172-2174. |
| [10] | WANG M H, LI D Sh, YUAN Zh Zh. Photoluminescence of Si-rich silicon nitride:defect-related states and silicon nanoclusters[J]. Applied Physics Letters, 2007, 90(13):131901-131903. |
| [11] | LI T, JERZY K, KONG W, et al. Interference fringe-free transmission spectroscopy of amorphous thin films[J]. Journal of Applied Physics, 2000, 88(10):5764-5771. |
| [12] | YU W, HOU H H, WANG B Zh, et al. Microstrueture and optical properties of hydrogenated amorphous silicon nitride films[J]. Journal of Hebei University, 2003, 23(3):253-256(in Chinese). |
| [13] | MAITINEZ F L, del PRADO A, MATIL I, et al. Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method[J]. Journal of Applied Physics, 1999, 86(4):2055-2061. |
| [14] | SUN K F, LI Z Q, LI X. Influence of substrate temperature on SiN thin film deposited by RF magnetron reaction sputtering[J]. Process Technique and Materials, 2007,32(6):516-519(in Chinese). |
| [15] | LIAO W G, ZENG X B, WEN G Zh, et al. Photoluminescences and structure performances of Si-rich silicon nitride thin films containing Si quantum dot[J]. Acta Physica Sinica, 2013, 62(12):126801-126805(in Chinese). |