[1] Takada K. Yokohama I, Chida K et al. Appl Opt, 1987;261~603~1606
[2] Kurbativ L N, Shakhidzhanov S S. Bystrova L Vet al. Soviet Physics Semiconduct. 1971;4:1739~1744
[3] 易武秀译.光纤通信技术,1991:4,29~34
[4] Wang C S. Cheng W H. Hwang C J. A P L, 1982:41(7),587~589
[5] Kwong N S K, Bar-Chaim N. A P L. 1989;54(4),298~300
[6] Chen T R, Zhuang Y H. Xu Y J et al.A P L, 1990;56(25):2502
[7] Nagai H. Noguchi Y. Sudo S. A P L. 1989;54(18):1719~1721
[8] Magari K. Hoguchi Y. Okamoto K. Electron Lett,1990;25(18):1445~1446
[9] Tattoka K, Naito H, YuriMet al. IEEE J Q E, 1991;27(6):1568~1572
[10] Kaminow I. Eisenstein G, Stulz L et al. IEEE J Q E, 1983;19(1)178
[11] Morrison C B, Zinkiewicz L W, Niesen J et al. Electron Lett,1985;21(19)1840~841
[12] Alphonse G A. IEEE J Q E. 1988;24(12):2454
[13] Lin C F. Electron Lett. 1991;27(11):968
[14] Kondo S. Yasaka H. Noguchi Y et al. Electron Lett, 1992;28(2):132~133