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Volume 19 Issue 3
Dec.  2013
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Article Navigation >  LASER TECHNOLOGY  > 1995 >  19(3): 135-140

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Research on laser damage threshold of photoelectric detector

  • 1.

    Southwest Institute of Technical Physics

  • The perpetual laser damage effects of silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated by a laser of 1.06μm or 0.53μm wavelength are studied.The laser damage thresholds of the detectors are experimentally measured.The main reason of causing the perpetual damage are the laser heat singe on the PN connect of photoelectric diodes.The damage thresholds are relative to the laser wavelength,pulse width and the photodiod structure.
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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Research on laser damage threshold of photoelectric detector

  • 1. Southwest Institute of Technical Physics
  • Available Online: 1995-05-25

Abstract: The perpetual laser damage effects of silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated by a laser of 1.06μm or 0.53μm wavelength are studied.The laser damage thresholds of the detectors are experimentally measured.The main reason of causing the perpetual damage are the laser heat singe on the PN connect of photoelectric diodes.The damage thresholds are relative to the laser wavelength,pulse width and the photodiod structure.

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