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Volume 29 Issue 6
Sep.  2013
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The research of laser treatment of GaN thin film

  • Received Date: 2004-08-20
    Accepted Date: 2004-11-17
  • Through laser damage experiment,the damage threshold of GaN thin film at 10.6μm is reported,i.e.64J/cm2.To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser.The results show that the defect density is decreased great after treatment.Finally,treating mechanism is analyzed.
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The research of laser treatment of GaN thin film

  • 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology, Chengdu 610054, China

Abstract: Through laser damage experiment,the damage threshold of GaN thin film at 10.6μm is reported,i.e.64J/cm2.To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser.The results show that the defect density is decreased great after treatment.Finally,treating mechanism is analyzed.

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