The gain and polarization characteristics of semiconductor optical amplifiers

CUI Ying-chao; ZHANG Shu-lian; Feng Jin-yuan

Volume 29 Issue 5

Sep. 2013

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The gain and polarization characteristics of semiconductor optical amplifiers

1.
Department of Applied Physics, College of Science, South China University of Technology, Guangzhou 510640, China;
2.
State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China

Corresponding author: ZHANG Shu-lian, zsl-dpi@tsinghua.edu.cn ;
Received Date: 2004-07-02
Accepted Date: 2004-09-07

Abstract

The two important characteristics of semiconductor optical amplifiers(SOA),gain and polarization,are introduced completely.In the section of gain characteristic,the phenomena of gain modulation and gain saturation are described.The methods to enhance the gain of SOA are presented.In the other section,the reasons resulting in polarization sensitivity of SOA are analyzed and the way to perform SOA with low gain polarization sensitivity is discussed.At last,the phenomenon of the phase polarization sensitivity in SOA paid much attention in recent years is reported.
- semiconductor optical amplifier,
- gain modulation,
- gain saturation,
- gain polarization sensitivity,
- phase polarization sensitivity

References

[1]	程振杰,余重秀.利用半导体光放大器(SOA)实现全光波长变换(WC)[J].激光技术,2000,24(3):158～162.
[2]	黄德修,刘雪峰.半导体激光器及其应用[M].北京:国防工业出版社,2001.149～153.
[3]	李士杰,张书练.应用激光基础[M].杭州:浙江大学出版社,1994.69～70.
[4]	BARNSLEY P E,ISAAC J I,ELTON D J.Ultra-low reflectivity broadb and 1.5μm GaInAsP semiconductor optical amplifiers[J].Electron Lett,1990,26(12):825～827.
[5]	ZAH C E,CANEAU C,SHOKOOHI F K et al.1.3μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings[J].Electron Lett,1988,24(20):1275～1276.
[6]	CHA J,KITAMURA M,HONMOU H et al.1.5μm band traveling-wave semiconductor optical amplifiers with window facet structure[J].Electron Lett,1989,25(18):1241～1242.
[7]	MORITO K,EKAWA M,WATANABE T et al.High-output-power polarization-insensitive semiconductor optical amplifier[J].IEEE J Lightwave Technol,2003,21(1):176～181.
[8]	OLSSON N A.Polarization-independent configuration optical amplifier[J].Electron Lett,1988,24(17):1075～1076.
[9]	刘雪峰,孙军强,刘德明 et al.行波半导体光放大器的偏振特性研究[J].光学学报,1995,15(10):1306～1310.
[10]	NEWKIRK M A,MILLER B I,KOREN U et al.1.5μm multi-quantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization independent gain[J].IEEE Photon Technol Lett,1993,5(4):406～408.
[11]	DOUSSIER P,GARABEDIAN P,GRAVER C et al.1.55μm polarization-independent semiconductor optical amplifier with 25dB fiber to fiber gain[J].IEEE Photon Technol Lett,1994,6(2):170～172.
[12]	CHO Y S,CHOI W Y.Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells[J].IEEE J Q E,2001,37(4):574～579.
[13]	MATHUR A,DAPKUS P D.1.55μm dual-polarization lasers implemented with compressive and tensile-strained quantum wells[J].IEEE Photon Technol Lett,1995,7(11):1243～1245.
[14]	段子刚,张哲民,刘德明 et al.低偏振灵敏度半导体光放大器[J].中国激光,2000,27(3):203～205.
[15]	刘德明,徐文超,黄德修.低偏振相关的半导体光放大器[J].华中理工大学学报,1999,27 (10):1～3.
[16]	ITO T,YOSHIMOTO N,MAGARI K et al.Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate[J].IEEE Photon Technol Lett,1998,10(5):657～659.
[17]	MAGARI K,OKAMOTO M,NOGUCHI Y.1.55μm polarization insensitive high-gain tensile-strained-barrier MQW optical amplifier[J].IEEE Photon Technol Lett,1991,3(11):998～1000.
[18]	GODEFROY A,Le CORRE A,CLEROT F.1.55μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer[J].IEEE Photon Technol Lett,1995,7(5):473～475.
[19]	TIEMEIJER L F,THIJS P J A,Van DONGEN T et al.Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window[J].A P L,1993,62(8):826～828.
[20]	TISHININ D,UPPAL K,KIM I et al.1.3μm polarization insensitive amplifiers with integrated-mode transformers[J].IEEE Photon Technol Lett,1997,9(10):1337～1339.
[21]	Di CARLO A,REALE A,TOCCA L et al.Polarization-independent delta-strained semiconductor optical amplifiers:a tight-binding study[J].IEEE J Q E,1998,34(9):1730～1739.
[22]	WARTAK M S,WEETMAN P.The effect of thickness of delta-strained layers in the design of polarization-insensitive semiconductor optical amplifiers[J].IEEE Photon Technol Lett,2004,16(4):996～998.
[23]	SOTO H,ERASME D,GUEKOS G.Cross-polarization modulation in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1999,11(8):970～972.
[24]	MANNING R J,ANTONOPOULOS A,ROUX L R et al.Experimental measurement of nonlinear polarization rotation in semiconductor optical amplifiers[J].Electron Lett,2001,37(4):229～231.
[25]	SOTO H,ALVAREZ E,DIAZ C A et al.Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier[J].Opt Commun,2004,237:121～131.
[26]	STEPENS M F C,ASGHARI M,PENTY R V et al.Demonstration of ultrafast all-optical wavelength conversion utilizing birefringence in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1997,9(4):449～451.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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The gain and polarization characteristics of semiconductor optical amplifiers

Corresponding author: ZHANG Shu-lian, zsl-dpi@tsinghua.edu.cn;

1. Department of Applied Physics, College of Science, South China University of Technology, Guangzhou 510640, China;

2. State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China

Received Date: 2004-07-02

Accepted Date: 2004-09-07

Available Online: 2005-09-25

Abstract: The two important characteristics of semiconductor optical amplifiers(SOA),gain and polarization,are introduced completely.In the section of gain characteristic,the phenomena of gain modulation and gain saturation are described.The methods to enhance the gain of SOA are presented.In the other section,the reasons resulting in polarization sensitivity of SOA are analyzed and the way to perform SOA with low gain polarization sensitivity is discussed.At last,the phenomenon of the phase polarization sensitivity in SOA paid much attention in recent years is reported.

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Reference (26)

[1]	程振杰,余重秀.利用半导体光放大器(SOA)实现全光波长变换(WC)[J].激光技术,2000,24(3):158～162.
[2]	黄德修,刘雪峰.半导体激光器及其应用[M].北京:国防工业出版社,2001.149～153.
[3]	李士杰,张书练.应用激光基础[M].杭州:浙江大学出版社,1994.69～70.
[4]	BARNSLEY P E,ISAAC J I,ELTON D J.Ultra-low reflectivity broadb and 1.5μm GaInAsP semiconductor optical amplifiers[J].Electron Lett,1990,26(12):825～827.
[5]	ZAH C E,CANEAU C,SHOKOOHI F K et al.1.3μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings[J].Electron Lett,1988,24(20):1275～1276.
[6]	CHA J,KITAMURA M,HONMOU H et al.1.5μm band traveling-wave semiconductor optical amplifiers with window facet structure[J].Electron Lett,1989,25(18):1241～1242.
[7]	MORITO K,EKAWA M,WATANABE T et al.High-output-power polarization-insensitive semiconductor optical amplifier[J].IEEE J Lightwave Technol,2003,21(1):176～181.
[8]	OLSSON N A.Polarization-independent configuration optical amplifier[J].Electron Lett,1988,24(17):1075～1076.
[9]	刘雪峰,孙军强,刘德明 et al.行波半导体光放大器的偏振特性研究[J].光学学报,1995,15(10):1306～1310.
[10]	NEWKIRK M A,MILLER B I,KOREN U et al.1.5μm multi-quantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization independent gain[J].IEEE Photon Technol Lett,1993,5(4):406～408.
[11]	DOUSSIER P,GARABEDIAN P,GRAVER C et al.1.55μm polarization-independent semiconductor optical amplifier with 25dB fiber to fiber gain[J].IEEE Photon Technol Lett,1994,6(2):170～172.
[12]	CHO Y S,CHOI W Y.Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells[J].IEEE J Q E,2001,37(4):574～579.
[13]	MATHUR A,DAPKUS P D.1.55μm dual-polarization lasers implemented with compressive and tensile-strained quantum wells[J].IEEE Photon Technol Lett,1995,7(11):1243～1245.
[14]	段子刚,张哲民,刘德明 et al.低偏振灵敏度半导体光放大器[J].中国激光,2000,27(3):203～205.
[15]	刘德明,徐文超,黄德修.低偏振相关的半导体光放大器[J].华中理工大学学报,1999,27 (10):1～3.
[16]	ITO T,YOSHIMOTO N,MAGARI K et al.Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate[J].IEEE Photon Technol Lett,1998,10(5):657～659.
[17]	MAGARI K,OKAMOTO M,NOGUCHI Y.1.55μm polarization insensitive high-gain tensile-strained-barrier MQW optical amplifier[J].IEEE Photon Technol Lett,1991,3(11):998～1000.
[18]	GODEFROY A,Le CORRE A,CLEROT F.1.55μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer[J].IEEE Photon Technol Lett,1995,7(5):473～475.
[19]	TIEMEIJER L F,THIJS P J A,Van DONGEN T et al.Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window[J].A P L,1993,62(8):826～828.
[20]	TISHININ D,UPPAL K,KIM I et al.1.3μm polarization insensitive amplifiers with integrated-mode transformers[J].IEEE Photon Technol Lett,1997,9(10):1337～1339.
[21]	Di CARLO A,REALE A,TOCCA L et al.Polarization-independent delta-strained semiconductor optical amplifiers:a tight-binding study[J].IEEE J Q E,1998,34(9):1730～1739.
[22]	WARTAK M S,WEETMAN P.The effect of thickness of delta-strained layers in the design of polarization-insensitive semiconductor optical amplifiers[J].IEEE Photon Technol Lett,2004,16(4):996～998.
[23]	SOTO H,ERASME D,GUEKOS G.Cross-polarization modulation in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1999,11(8):970～972.
[24]	MANNING R J,ANTONOPOULOS A,ROUX L R et al.Experimental measurement of nonlinear polarization rotation in semiconductor optical amplifiers[J].Electron Lett,2001,37(4):229～231.
[25]	SOTO H,ALVAREZ E,DIAZ C A et al.Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier[J].Opt Commun,2004,237:121～131.
[26]	STEPENS M F C,ASGHARI M,PENTY R V et al.Demonstration of ultrafast all-optical wavelength conversion utilizing birefringence in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1997,9(4):449～451.

The gain and polarization characteristics of semiconductor optical amplifiers

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views