Research of gain of vertical cavity semiconductor optical amplifiers based on transfer matrix method
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Department of Computer and Communication Engineering, Southwest Jiaotong University, Chengdu 610031, China
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Corresponding author:
LUO Bin, hclu@home.swjtu.edu.cn
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Received Date:
2004-05-08
Accepted Date:
2004-06-29
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Abstract
The gain and bandwidth of vertical cavity semiconductor optical amplifiers (VCSOAs) were studied based on transfer matrix method.The different carrier density and layers number of DBR will affect the gain characteristic and the wavelength of the peak gain will shift with the variation of position of the quantum well stacks in active region.The result of calculation is agreement with the experiment.
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