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Volume 29 Issue 1
Sep.  2013
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Analysis of laser measurement for thin-film stress

  • Corresponding author: QIAN Long-sheng, cni863@public.cc.jl.cn
  • Received Date: 2003-12-31
    Accepted Date: 2004-03-01
  • Various measurements of thin-film stress are summarized. The basic theory and measuring principle of laser macro deformation analysis (including laser interference measurement and laser beam deflexion measurement) that utilized substrate curvature measurement are analyzed; the precision of different measurements is evaluated. The precision of laser interference measurement nearly reaches 0.92% and the least stress that could be measured is 15.7MPa. Compared to laser interference measurement,the precision of laser beam deflexion measurement is low,it is about 2.12%,the least stress which could be measured is 25.5MPa,and space resolution is low as well,which is approximate 100μm.
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  • [1]

    DOERNER M F, NIX W D. Stresses and deformation processes in thin films on substrates [J]. CRC Critical Review in Solid State Science,1988,14(3):225~268.
    [2]

    WINDISCHMANN H. Intrinsic stress scaling for polycrystalline thin films prepered by ion beam sputtering [J]. J A P, 1987,62 (5):1800~1807.
    [3] PULKER H K.仲永安,谢于深.玻璃镀膜[M].上海:科学出版社,1988.315.

    [4] 田民波,刘德令.薄膜科学与技术手册(上册)[M].北京:机械工业出版社,1991.144~146.

    [5]

    GLANG R, HOLMWOOD R A, LROSENFELD R. Determination of stress on single crystalline silicon substrates [J]. Rev Sci Instr, 1965,36:361~364.
    [6] 熊胜明,张云洞,唐晋发.电子束反应蒸发氧化物薄膜的应力特性[J].光电工程,2001,28(1):13~15.

    [7]

    CHUEN L,CHENG Ch L,CHENG Ch J. The measurement of thin film stress using phase shifting intefferometry [J]. Journal of Modern Optics,2000,47 (5):839~849.
    [8]

    HILL R,THOMAS M E R, HARTNET M P. The use of surface profilometers for the measurement of wafer curvature [J]. Vacuum Science and Technology, 1988,6:231~235.
    [9] 杨银堂,付俊兴,周端.半导体基片上薄膜应力的测试装置[J].仪器仪表学报,1997,18:228~231.

    [10]

    PIEÑKOS T,GÃDYSZEWSKI L. Determination of strain and stress in thin films using curvature measurements [J]. Review of Scientific Instruments, 1998,69 (2):460~462.
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Analysis of laser measurement for thin-film stress

    Corresponding author: QIAN Long-sheng, cni863@public.cc.jl.cn
  • 1. Changchun Institute of Optics, Fine Mechanics and Physics, the Chinese Academy of Sciences, Changchun 130022, China

Abstract: Various measurements of thin-film stress are summarized. The basic theory and measuring principle of laser macro deformation analysis (including laser interference measurement and laser beam deflexion measurement) that utilized substrate curvature measurement are analyzed; the precision of different measurements is evaluated. The precision of laser interference measurement nearly reaches 0.92% and the least stress that could be measured is 15.7MPa. Compared to laser interference measurement,the precision of laser beam deflexion measurement is low,it is about 2.12%,the least stress which could be measured is 25.5MPa,and space resolution is low as well,which is approximate 100μm.

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