|
[1]
|
雷士湛.创造奇迹的光——21世纪的激光技术[M].北京:科技文献出版社,1995.43.
|
|
[2]
|
吴锦雷,吴全德.几种新型的薄膜材料[M].北京:北京大学出版社,1999.244～262.
|
|
[3]
|
VALKONEN M P,LINDROOS S,RESCH R.Growth of zinc sulfide thin films on (100)Si with the successive ionic layer adsorption and reaction method studied by atomic force microscopy[J].Appl Surf Sci,1998,136:131～136. |
|
[4]
|
PRETE P,LOVERGINE N,MAZZER M et al.Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS:growth,morphology and cathodoluminescence results[J].J Crystal Growth,1999,204:29～34. |
|
[5]
|
KITA R,HASE T,SASAKI M et al.Epitaxial growth of CuO thin films by in situ oxidation of Cu thin films[J].J Crystal Growth,1991,115:752～757. |
|
[6]
|
SHINOYA S,YEN W M.Phosphor handbook[M].Boca,Raton,Boston,London,New York,Washington D C:CRC Press,1999.137. |
|
[7]
|
肖志国.蓄光型发光材料及其制品[M].北京:化学工业出版社,2002.21.
|
|
[8]
|
里耳 N,奥特 H.硫化锌发光体的结构[M].北京:科学出版社,1965.8.
|
|
[9]
|
贾冬冬,吴伯群,刘玉龙.ZnS型荧光粉的粒度、形貌和荧光发射谱的研究[J].光散射学报,2000,12(3):150～154.
|
|
[10]
|
叶云霞,王大承,张永康.脉冲激光沉积制备薄膜的研究动态[J].江苏理工大学学报(自然科学版),2001,22(2):56～59.
|
|
[11]
|
许华平,辛火平,郑立荣.高导电性BaRuO3薄膜及其脉冲激光沉积[J].中国激光,1996,23(1):80～84.
|
|
[12]
|
MCLAUGHLIN M,SAKEEK H F,MAGUIRE P et al.Properties of ZnS thin films prepared by 248nm pulsed laser deposition[J].A P L,1993,63(14):1865～1867. |
|
[13]
|
HILLIE K T,CURREN C,SWART H C.ZnS thin films grown on Si(100) by XeCl pulsed laser ablation[J].Appl Surf Sci,2001,177:73～77. |
|
[14]
|
STRUM K,FAHLER S,KREBS H U.Pulsed laser deposition ofmetals in low pressure inert gas[J].Appl Surf Sci,2000,154/155:462～466. |
|
[15]
|
YEUNG K M,TSANG W S,MAK C L et al.Optical studies of ZnS:Mn films grown by pulsed laser deposition[J].A P L,2002,192(7):3636～3640. |
|
[16]
|
HIRANATSU H,OHTA H,HIRANO M et al.Heteroepitaxialgrowth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere[J].Solid-State Communication,2002,124:411～415. |
|
[17]
|
YOO Y Z,CHIKYOW T,AHNET P et al.Comparison of hexagonal ZnS film properties on c-and α-sapphires[J].J Crystal Growth,2002,237～239:1594～1598. |
|
[18]
|
YOO Y Z,JIN Zh W,CHIKYOW T.S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method[J].A P L,2002,81(20):3798～3800. |
|
[19]
|
GEOHEGAN D B.Pulsed laser deposition of thin films[M].New York:Weley,1994.115. |
|
[20]
|
周岳亮.脉冲激光沉积高温超导薄膜[J].物理,1998,27(3):167～173.
|
|
[21]
|
SHEN W P,KWOK H S.Crystalline phases of Ⅱ-Ⅵ compound semiconductors grown by pulsed laser deposition[J].A P L,1994,65(17):2162～2165. |
|
[22]
|
SPEMANN D,VOGT J,BUTZ OPPERMANN T D et al.Ion beam analysis of Zn2·2xCuxInxS2 films[J].Nuclear Instrunents and Methods in Physica Research,2002,B190:667～672. |
|
[23]
|
WAGNER G,LANGE U,BENTE K et al.Structural properties of thin Zn0.62Cu0.19In0.19S alloy films grown on Si(111) substrates by pulsed laser deposition[J].Thin Solid Films,2000,358:80～85. |
|
[24]
|
冯钟潮,赵岩,锺志源.脉冲激光溅射沉积PZT膜[J].应用激光,1999,19(5):262～264.
|
|
[25]
|
敖育红,胡少六,龙华 et al.脉冲激光沉积薄膜技术研究新进展[J].激光技术,2003,27(5):453～456.
|
Map
DownLoad: