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Volume 28 Issue 3
Sep.  2013
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Temperature field distribution and thermal distortion of thin film coatings irradiated by CO2 laser

  • Received Date: 2003-06-03
    Accepted Date: 2003-11-07
  • The basic theory of the temperature field of optical thin films is given.The temperature field distribution of dielectric thin films irradiated by 10.6μm CO2 lasers has been simulated numerically and analyzed theoretically using alternating direction-implicit technique.Using the Shack-Hartmann wavefront sensor,the thermal distortion of the substrate,the single-layer dielectric thin films with different thickness,and the multi-layer dielectric thin films with different multilayer thin films(YbF3/ZnSe)irradiated by CO2 laser are studied experimentally.It can be shown that the temperature field distribution of thin film coatings irradiated by lasers deperds on the field distribution,power and irradiating time of lasers.For the 10.6μm laser,Ge is the most suitable substrate material.
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    [3] 徐啟阳,王新兵.高功率连续CO2激光器[M].北京:国防工业出版社,2000.3~6.

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Temperature field distribution and thermal distortion of thin film coatings irradiated by CO2 laser

  • 1. College of Electronic Information, Sichuan University, Chengdu 610064, China;
  • 2. Department of Physics, Hebei Northern College, Zhang Jiakou 075028, Chian;
  • 3. Institute of Optics & Electronics, the Chinese Academy of Sciences, Shuangliu 610209, China

Abstract: The basic theory of the temperature field of optical thin films is given.The temperature field distribution of dielectric thin films irradiated by 10.6μm CO2 lasers has been simulated numerically and analyzed theoretically using alternating direction-implicit technique.Using the Shack-Hartmann wavefront sensor,the thermal distortion of the substrate,the single-layer dielectric thin films with different thickness,and the multi-layer dielectric thin films with different multilayer thin films(YbF3/ZnSe)irradiated by CO2 laser are studied experimentally.It can be shown that the temperature field distribution of thin film coatings irradiated by lasers deperds on the field distribution,power and irradiating time of lasers.For the 10.6μm laser,Ge is the most suitable substrate material.

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