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Volume 27 Issue 3
Sep.  2013
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Citation:
shu

Ultrafast dynamic gain characteristics of semiconductor optical amplifiers

  • 1.

    Department of Optoelectronic Engineering, HUST, Wuhan, 430074

  • Received Date: 2002-11-04
    Accepted Date: 2002-12-18
  • An advanced time-domain dynamic model for the investigation of semiconductor optical amplifiers(SOA) is presented.The model accounts for the ultrafast gain dynamics,the gain saturation and the pulse distortion induced by carrier density pulsation(CDP),carrier heating(CH) and spectral hole burning(SHB),the focus is on the ultrashort pulse gain saturation in SOA.It is shown by numerical simulation that there is a critical pulsewidth around 10ps,below which the intraband effects cannot be neglected.
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  • [1]

    Manning R J,Ellis A D,Poustie A J et al.J O S A,1997,B14(11):3204～3216.
    [2]

    Agrawal G P,Olsson N A.IEEE J Q E,1989,25(11):2297～2306.
    [3]

    Uskov A,Mork J,Mark J.IEEE Photon Technol Lett,1992,4(5):443～446.
    [4]

    Mecozzi A,Mork J.IEEE J Select Topics Quantum Electron,1997,3(5):1190～1207.
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通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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Ultrafast dynamic gain characteristics of semiconductor optical amplifiers

  • 1. Department of Optoelectronic Engineering, HUST, Wuhan, 430074
  • Received Date: 2002-11-04
  • Accepted Date: 2002-12-18
  • Available Online: 2003-05-25

Abstract: An advanced time-domain dynamic model for the investigation of semiconductor optical amplifiers(SOA) is presented.The model accounts for the ultrafast gain dynamics,the gain saturation and the pulse distortion induced by carrier density pulsation(CDP),carrier heating(CH) and spectral hole burning(SHB),the focus is on the ultrashort pulse gain saturation in SOA.It is shown by numerical simulation that there is a critical pulsewidth around 10ps,below which the intraband effects cannot be neglected.

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