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Volume 26 Issue 1
Sep.  2013
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Citation:
shu

Bistability of currents passing LD in wavelength tunable external cavity

  • 1.

    Department of Optoelectronics, Sichuan University, Chengdu, 610064

  • Received Date: 2001-02-08
    Accepted Date: 2001-05-29
  • Because quasi-Fermi levels of a laser diode(LD) vary with the carrier density,it is predicted that a hysteresis loop should occur for the current passing LD while a hysteresis loop appears for the power-frequency curve of a tunable external cavity semiconductor.
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    [2] 陈建国,李焱,李大义 et al.激光技术,2000,24(5):285～288.
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    Yan C,Wang X,Mcinerey J G.IEEE J Q E,1996,32(5):813～821.
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    Zorabedian P,Trutna W R,Cutler L S Jr et al.IEEE J Q E,1987,23(11):1855～1860.
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    Li Y,Lu Y,Chen J G et al.J Opt A:pure Appl Opt,1999,1:466～470.
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    Zhou X H,Chen J G,Lu Y.Appl Opt,1997,36(8):4138～4141.
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    Agrawal G P,Dutta N K.Semiconductor Lasers.2th ed,New York:van Nostrand Reinhold Company,1993.
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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Bistability of currents passing LD in wavelength tunable external cavity

  • 1. Department of Optoelectronics, Sichuan University, Chengdu, 610064
  • Received Date: 2001-02-08
  • Accepted Date: 2001-05-29
  • Available Online: 2002-01-25

Abstract: Because quasi-Fermi levels of a laser diode(LD) vary with the carrier density,it is predicted that a hysteresis loop should occur for the current passing LD while a hysteresis loop appears for the power-frequency curve of a tunable external cavity semiconductor.

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