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Volume 22 Issue 1
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Citation:
shu

Study of YBa2Cu3-xZnxO7thin film infrared detector

  • 1.

    Institute of Laser, Yunnan Polytechnic University, Kunming, 650051;

  • 2.

    Kunming Institute of Physics, Kunming, 650051

  • Received Date: 1997-05-06
    Accepted Date: 1997-09-29
  • Base on the theoretical analysis,the YBa2Cu3-xZnxO7 thin film infrared detector has been designed and manufactured.The properties of the detector has been measured at 77°K and are well agreement with design,as follow:Rv(500,10,1)=3587V/W,NEP(500,10,1)=6.5×10-12W/Hz1/2,D*(500,10,1)=7.2×1012cmHz1/2/W,τ(500,10,1)=1.2ms.
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    Anderson P W,Carr J P.Phys Rev,1994;B41:1893
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    Ong N P,Salem J,Lee W Y et al.Phys Rev Lett,1991;67:2088
    [3] 张振杰译.光辐射探测器.西安:陕西省教育出版社,1991:346
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    Carringt on A,Carts P F.Phys Rev Lett,1992;69:2855
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    Richards P L,Fisher M J,Dehart T E et al.A P L,1989;54:283
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    Polliner C,Sugimoto A,Yamaquchi Y et al.J Phys Soc Jpn,1994;71:3348
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    Fukuyama H,Tanaka M,Tach ik i M.J Phys Soc.Jpn,1995;74:42
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  • 1. 

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Study of YBa2Cu3-xZnxO7thin film infrared detector

  • 1. Institute of Laser, Yunnan Polytechnic University, Kunming, 650051;
  • 2. Kunming Institute of Physics, Kunming, 650051
  • Received Date: 1997-05-06
  • Accepted Date: 1997-09-29
  • Available Online: 1998-01-25

Abstract: Base on the theoretical analysis,the YBa2Cu3-xZnxO7 thin film infrared detector has been designed and manufactured.The properties of the detector has been measured at 77°K and are well agreement with design,as follow:Rv(500,10,1)=3587V/W,NEP(500,10,1)=6.5×10-12W/Hz1/2,D*(500,10,1)=7.2×1012cmHz1/2/W,τ(500,10,1)=1.2ms.

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