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Volume 20 Issue 3
Sep.  2013
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Article Navigation >  LASER TECHNOLOGY  > 1996 >  20(3): 177-181

Citation:
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Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers

  • 1.

    Southwest institute of Technical Physics

  • Received Date: 1995-02-17
  • Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.
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    Yariv A.Circuit and Devices,1989,5(6):25
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    AraKawa Y,Yariv A.IEEE J.Q E,1985,QE-21:1666
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    Botez D,Channin D J,Ettenberg M.Opt Engng,1982,21(6):1066
    [4]

    Casey H.C,Panish M B.Heterostructure Semiconductor Lasers.New York:Academic Press,(1982)
    [5]

    Kaminow I P,Nahory,R E,Pollack M A et al.Electron Lett.1979.15:763
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers

  • 1. Southwest institute of Technical Physics
  • Received Date: 1995-02-17
  • Available Online: 1996-05-25

Abstract: Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.

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